LESHAN RADIO COMPANY, LTD. L9013*LT1 General Purpose Transistors NPN Silicon 3 3 COLLECTOR 1 2 1 BASE SOT-23 (TO-236AB) 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 20 V Collector-Base Voltage VCBO 40 V Emitter-Base Voltage VEBO 5 V IC 500 mAdc Symbol Max Unit 225 mW 1.8 mW/oC 556 o Collector current-continuoun THERMAL CHARATEERISTICS Characteristic Total Device Dissipation FR-5 Board, (1) PD o TA=25 C o Derate above 25 C Thermal Resistance, Junction to Ambient R θ JA C /W PD Total Device Dissipation o Alumina Substrate, (2) TA=25 C o Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R θJA Tj ,Tstg 300 mW 2.4 mW/oC 417 -55 to +150 C /W o o C DEVICE MARKING L9013QLT1=13Q ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC=1.0mA) Emitter-Base Breakdown Voltage (IE=100µA) Collector-Base Breakdown Voltage (IC=100µA) Collector Cutoff Current (VCB=35V) Emitter Cutoff Current (VEB=4V) V(BR)CEO 20 - - V V(BR)EBO 5 - - V V(BR)CBO 40 - - V 150 nA 150 nA ICBO IEBO - - L9013*LT1–1/2 LESHAN RADIO COMPANY, LTD. L9013*LT1 ON CHARACTERISTICS DC Current Gain (IC=50mA, VCE=1V) Collector-Emitter Saturation Voltage (IC=500mA,IB=50mA) NOTE: Hfe 100 - 600 - - 0.6 VCE(S) * P Q HFE 100~200 150~300 R 200~400 V S 300~600 SOT-23 (TO-236AB) A L NOTES: 1. CONTROLLING DIMENSION: MILLIMETERS 3 2. LEAD THICKNESS SPECIFIED PER L / F DRAWING WITH B S 1 V SOLDER PLATING. 2 DIM A B C D G H J K L S V G C D H K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 J PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm L9013*LT1–2/2