TPS54339E www.ti.com SLVSBM0A – DECEMBER 2012 – REVISED DECEMBER 2012 4.5V to 23V Input, 3-A Synchronous Step-Down SWIFT™ Converter with Eco-Mode™ Check for Samples: TPS54339E FEATURES DESCRIPTION • The TPS54339E is an adaptive on-time D-CAP2™ mode synchronous buck converter. The TPS54339E enables system designers to complete the suite of various end-equipment power bus regulators with a cost effective, low component count, low standby current solution. The main control loop for the TPS54339E uses the D-CAP2™ mode control that provides a fast transient response with no external compensation components. The adaptive on-time control supports seamless transition between PWM mode at higher load conditions and Eco-mode™ operation at light loads. Eco-mode™ allows the TPS54339E to maintain high efficiency during lighter load conditions. The TPS54339E also has a proprietary circuit that enables the device to adopt to both low equivalent series resistance (ESR) output capacitors, such as POSCAP or SP-CAP, and ultralow ESR ceramic capacitors. The device operates from 4.5-V to 18-V VIN input. The output voltage can be programmed between 0.76 V and 7 V. The device also features an adjustable soft start time. The TPS54339E is available in the 8-pin DDA package, and designed to operate from –40°C to 85°C. 1 23 • • • • • • • • • • • D-CAP2™ Mode Enables Fast Transient Response Low Output Ripple and Allows Ceramic Output Capacitor Wide VIN Input Voltage Range: 4.5 V to 23 V Output Voltage Range: 0.76 V to 7.0 V Highly Efficient Integrated FETs Optimized for Lower Duty Cycle Applications – 140 mΩ (High Side) and 70 mΩ (Low Side) High Efficiency, less than 10 μA at shutdown High Initial Bandgap Reference Accuracy Adjustable Soft Start Pre-Biased Soft Start 600-kHz Switching Frequency (fSW) Cycle By Cycle Over Current Limit Auto-Skip Eco-mode™ for High Efficiency at Light Load APPLICATIONS • Wide Range of Applications for Low Voltage System – Digital TV Power Supply – High Definition Blu-ray Disc™ Players – Networking Home Terminal – Digital Set Top Box (STB) VIN Vout (50 mV/div) TPS54339EDDA 1 2 VOUT 3 4 VBST SS VIN EN SW VREG5 8 7 EN Iout (2 A/div) 6 5 GND VFB VOUT PwPd 9 100 us/div 1 2 3 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. D-CAP2, Eco-mode are trademarks of Texas Instruments. Blu-ray Disc is a trademark of Blu-ray Disc Association. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2012, Texas Instruments Incorporated TPS54339E SLVSBM0A – DECEMBER 2012 – REVISED DECEMBER 2012 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ORDERING INFORMATION (1) PACKAGE (2) TA –40°C to 85°C (1) (2) (3) (3) ORDERABLE PART NUMBER TPS54339EDDA DDA TRANSPORT MEDIA PIN Tube 8 TPS54339EDDAR Tape and Reel For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. Package drawings, thermal data, and symbolization are available at www.ti.com/packaging. All package options have Cu NIPDAU lead/ball finish. ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) VALUE Input voltage range Output voltage range MAX VIN, EN –0.3 25 VBST –0.3 31 VBST (10 ns transient) –0.3 33 VBST (vs SW) –0.3 6.5 VFB, SS –0.3 6.5 SW –2 25 SW (10 ns transient) –3 27 VREG5 –0.3 6.5 GND –0.3 0.3 –0.2 0.2 V 2 kV 500 V Voltage from GND to thermal pad, Vdiff Electrostatic discharge Human Body Model (HBM) Charged Device Model (CDM) Operating junction temperature, TJ –40 150 Storage temperature, Tstg –55 150 (1) UNIT MIN V V °C Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. THERMAL INFORMATION THERMAL METRIC (1) TPS54339E DDA (8 PINS) θJA Junction-to-ambient thermal resistance 46.2 θJCtop Junction-to-case (top) thermal resistance 53.9 θJB Junction-to-board thermal resistance 29.7 ψJT Junction-to-top characterization parameter 10.0 ψJB Junction-to-board characterization parameter 29.6 θJCbot Junction-to-case (bottom) thermal resistance 6.6 (1) 2 UNITS °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS54339E TPS54339E www.ti.com SLVSBM0A – DECEMBER 2012 – REVISED DECEMBER 2012 RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range, (unless otherwise noted) VIN Supply input voltage range VI Input voltage range MIN MAX 4.5 23 VBST –0.1 29 VBST (10 ns transient) –0.1 32 VBST(vs SW) –0.1 5.7 SS –0.1 5.7 EN –0.1 23 VFB –0.1 5.5 SW –1.8 23 SW (10 ns transient) UNIT V V –3 26 GND –0.1 0.1 –0.1 5.7 V 0 10 mA VO Output voltage range VREG5 IO Output Current range IVREG5 TA Operating free-air temperature –40 85 °C TJ Operating junction temperature –40 150 °C ELECTRICAL CHARACTERISTICS over operating free-air temperature range, VIN = 12 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENT IVIN Operating - non-switching supply current VIN current, TA = 25°C, EN = 5V, VFB = 0.8V 600 1100 μA IVINSDN Shutdown supply current 3.0 10 μA VIN current, TA = 25°C, EN = 0 V LOGIC THRESHOLD VENH EN high-level input voltage EN VENL EN low-level input voltage EN REN EN pin resistance to GND VEN = 12 V 1.6 200 V 400 0.6 V 800 kΩ VFB VOLTAGE AND DISCHARGE RESISTANCE VFBTH IVFB VFB threshold voltage VFB input current TA = 25°C, VO = 1.05 V, IO = 10 mA, Eco-mode™ operation TA = 25°C, VO = 1.05 V, continuous mode operation 772 749 VFB = 0.8 V, TA = 25°C mV 765 781 mV 0 ±0.1 μA 5.5 5.7 V VREG5 OUTPUT VVREG5 VREG5 output voltage TA = 25°C, 6.0 V < VIN < 23 V, 0 < IVREG5 < 5 mA 5.2 IVREG5 Output current VIN = 6 V, VREG5 = 4.0 V, TA = 25°C 20 RDS(on)h High side switch resistance 25°C, VBST - SW = 5.5 V (1) RDS(on)l Low side switch resistance 25°C (1) mA MOSFET 140 mΩ 70 mΩ CURRENT LIMIT Iocl Current limit L out = 2.2 μH (1) 3.5 4.1 5.7 A THERMAL SHUTDOWN TSDN Thermal shutdown threshold Shutdown temperature Hysteresis (1) (1) 165 °C 40 ON-TIME TIMER CONTROL tON On time VIN = 12 V, VO = 1.05 V 160 tOFF(MIN) Minimum off time TA = 25°C, VFB = 0.7 V (1) 260 (1) ns 310 ns Not production tested. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS54339E 3 TPS54339E SLVSBM0A – DECEMBER 2012 – REVISED DECEMBER 2012 www.ti.com ELECTRICAL CHARACTERISTICS (continued) over operating free-air temperature range, VIN = 12 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX 7.8 UNIT SOFT START ISSC SS charge current VSS = 1.0 V 4.2 6.0 ISSD SS discharge current VSS = 0.5 V 0.8 1.5 μA mA HICCUP AND OVERVOLTAGE PROTECTION VOVP Output OVP threshold OVP Detect (L>H) VUVP Output Hiccup threshold Hiccup detect (H>L) TUVPDEL Output Hiccup delay to Hiccup state TUVPEN Output Hiccup Enable delay Relative to soft-start time 125% 65% 6 µs x1.7 UVLO UVLO UVLO threshold Wake up VREG5 voltage 3.45 3.75 4.05 Hysteresis VREG5 voltage 0.17 0.33 0.47 V DEVICE INFORMATION DDA PACKAGE (TOP VIEW) 1 VBST 2 VIN SS 8 EN 7 VREG5 6 VFB 5 POWER PAD TPS54339E DDA HSOP8 3 SW 4 GND PIN FUNCTIONS PIN DESCRIPTION NAME NO. VBST 1 Supply input for the high-side FET gate drive circuit. Connect 0.1µF capacitor between VBST and SW pins. An internal diode is connected between VREG5 and VBST. VIN 2 Input voltage supply pin. SW 3 Switch node connection between high-side NFET and low-side NFET. GND 4 Ground pin. Power ground return for switching circuit. Connect sensitive SS and VFB returns to GND at a single point. VFB 5 Converter feedback input. Connect to output voltage with feedback resistor divider. 4 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS54339E TPS54339E www.ti.com SLVSBM0A – DECEMBER 2012 – REVISED DECEMBER 2012 PIN FUNCTIONS (continued) PIN DESCRIPTION NAME NO. VREG5 6 5.5 V power supply output. A capacitor (typical 0.47 µF) should be connected to GND. VREG5 is not active when EN is low. EN 7 Enable input control. EN is active high and must be pulled up to enable the device. SS 8 Soft-start control. An external capacitor should be connected to GND. Exposed Thermal Pad Thermal pad of the package. Must be soldered to achieve appropriate dissipation. Must be connected to GND. Back side FUNCTIONAL BLOCK DIAGRAM SS 8 Softstart SS 1 VBST VIN SGND VIN EN EN 7 2 Logic VREG5 VREG5 Control Logic 6 1 Shot OV SW 3 +25% VO XCON VREG5 PGND Ref SS Ceramic Capacitor PWM 4 SW 5 GND ZC VFB PGND SW SGND OCP PGND VIN OV VREG5 UVLO UVLO REF TSD Protection Logic Ref Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS54339E 5 TPS54339E SLVSBM0A – DECEMBER 2012 – REVISED DECEMBER 2012 www.ti.com OVERVIEW The TPS54339E is a 3-A synchronous step-down (buck) converter with two integrated N-channel MOSFETs. It operates using D-CAP2™ mode control. The fast transient response of D-CAP2™ control reduces the output capacitance required to meet a specific level of performance. Proprietary internal circuitry allows the use of low ESR output capacitors including ceramic and special polymer types. DETAILED DESCRIPTION PWM Operation The main control loop of the TPS54339E is an adaptive on-time pulse width modulation (PWM) controller that supports a proprietary D-CAP2™ mode control. D-CAP2™ mode control combines constant on-time control with an internal compensation circuit for pseudo-fixed frequency and low external component count configuration with both low ESR and ceramic output capacitors. It is stable even with virtually no ripple at the output. At the beginning of each cycle, the high-side MOSFET is turned on. This MOSFET is turned off after internal one shot timer expires. This one shot is set by the converter input voltage, VIN, and the output voltage, VO, to maintain a pseudo-fixed frequency over the input voltage range, hence it is called adaptive on-time control. The one-shot timer is reset and the high-side MOSFET is turned on again when the feedback voltage falls below the reference voltage. An internal ramp is added to reference voltage to simulate output ripple, eliminating the need for ESR induced output ripple from D-CAP2™ mode control. PWM Frequency and Adaptive On-Time Control TPS54339E uses an adaptive on-time control scheme and does not have a dedicated on board oscillator. The TPS54339E runs with a pseudo-constant frequency of 600 kHz by using the input voltage and output voltage to set the on-time one-shot timer. The on-time is inversely proportional to the input voltage and proportional to the output voltage; therefore, when the duty ratio is VOUT/VIN, the frequency is constant. Auto-Skip Eco-Mode™ Control The TPS54339E is designed with Auto-Skip Eco-mode™ to increase light load efficiency. As the output current decreases from heavy load condition, the inductor current is also reduced and eventually comes to point that its rippled valley touches zero level, which is the boundary between continuous conduction and discontinuous conduction modes. The rectifying MOSFET is turned off when its zero inductor current is detected. As the load current further decreases the converter run into discontinuous conduction mode. The on-time is kept almost the same as is was in the continuous conduction mode so that it takes longer time to discharge the output capacitor with smaller load current to the level of the reference voltage. The transition point to the light load operation IOUT(LL) current can be calculated in Equation 1 (VIN - VOUT )×VOUT 1 × I OUT ( LL ) = 2 × L × fsw VIN (1) Soft Start and Pre-Biased Soft Start The soft start function is adjustable. When the EN pin becomes high, 6 μA current begins charging the capacitor which is connected from the SS pin to GND. Smooth control of the output voltage is maintained during start up. The equation for the slow start time is shown in Equation 2. VFB voltage is 0.765 V and SS pin source current is 6 μA. t SS (ms) = CSS (nF) x VREF ´1.1 I (mA) SS = CSS (nF) x 0.765 ´1.1 6 (2) The TPS54339E contains a unique circuit to prevent current from being pulled from the output during startup if the output is pre-biased. When the soft-start commands a voltage higher than the pre-bias level (internal soft start becomes greater than feedback voltage VFB), the controller slowly activates synchronous rectification by starting the first low side FET gate driver pulses with a narrow on-time. It then increments that on-time on a cycle-by-cycle basis until it coincides with the time dictated by (1-D), where D is the duty cycle of the converter. This scheme prevents the initial sinking of the pre-bias output, and ensure that the out voltage (VO) starts and ramps up smoothly into regulation and the control loop is given time to transition from pre-biased start-up to normal mode operation. 6 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS54339E TPS54339E www.ti.com SLVSBM0A – DECEMBER 2012 – REVISED DECEMBER 2012 Current Protection The output overcurrent protection (OCP) is implemented using a cycle-by-cycle valley detect control circuit. The switch current is monitored by measuring the low-side FET switch voltage between the SW pin and GND. This voltage is proportional to the switch current. To improve accuracy, the voltage sensing is temperature compensated. During the on time of the high-side FET switch, the switch current increases at a linear rate determined by VIN, VOUT, the on-time and the output inductor value. During the on time of the low-side FET switch, this current decreases linearly. The average value of the switch current is the load current Iout. The TPS54339E constantly monitors the low-side FET switch voltage, which is proportional to the switch current, during the low-side on-time. If the measured voltage is above the voltage proportional to the current limit, an internal counter is incremented per each SW cycle and the converter maintains the low-side switch on until the measured voltage is below the voltage corresponding to the current limit at which time the switching cycle is terminated and a new switching cycle begins. In subsequent switching cycles, the on-time is set to a fixed value and the current is monitored in the same manner. If the over current condition exists for 7 consecutive switching cycles, the internal OCL threshold is set to a lower level, reducing the available output current. When a switching cycle occurs where the switch current is not above the lower OCL threshold, the counter is reset and the OCL limit is returned to the higher value. There are some important considerations for this type of over-current protection. The load current one half of the peak-to-peak inductor current higher than the over-current threshold. Also when the current is being limited, the output voltage tends to fall as the demanded load current may be higher than the current available from the converter. This may cause the output voltage to fall. When the VFB voltage becomes lower than 65% of the target voltage, the UVP comparator detects it. After 6µs detecting the UVP voltage, device will shut down and restart after 7 times SS period for Hiccup. When the over current condition is removed, the output voltage returns to the regulated value. This protection is non-latching. Over Voltage Protection TPS54339E detects over voltage conditions by monitoring the feedback voltage (VFB). This function is enabled after approximately 1.7 x times the soft start time. When the feedback voltage becomes higher than 125% of the target voltage, the OVP comparator output goes high and both the high-side MOSFET driver and the low-side MOSFET driver turn off. This function is non-latch operation. UVLO Protection Undervoltage lock out protection (UVLO) monitors the voltage of the VREG5 pin. When the VREG5 voltage is lower than UVLO threshold voltage, the TPS54339E is shut off. This protection is non-latching. Thermal Shutdown TPS54339E monitors the temperature of itself. If the temperature exceeds the threshold value (typically 165°C), the device is shut off. This is non-latch protection. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS54339E 7 TPS54339E SLVSBM0A – DECEMBER 2012 – REVISED DECEMBER 2012 www.ti.com TYPICAL CHARACTERISTICS VIN = 12 V, TA = 25°C (unless otherwise noted). 10 Ivccsdn - Shutdown Current (µA) Icc - Supply Current (µA) 1000 800 600 400 200 8 6 4 2 0 0 -50 0 50 100 Ij - Junction Temperature (ƒC) ±50 150 0 Figure 1. VIN CURRENT vs JUNCTION TEMPERATURE 100 150 C002 Figure 2. VIN SHUTDOWN CURRENT vs JUNCTION TEMPERATURE 1.100 VOUT - Output Voltage (V) 80 EN Input Current (µA) 50 Tj - Junction Temperature (ƒC) C001 60 VIN = 23 V 40 20 0 VIN = 23 V 1.075 VIN = 12 V 1.050 VIN = 5 V 1.025 1.000 0 5 10 15 20 EN Input Voltage (V) 25 0.0 Figure 3. EN CURRENT vs EN VOLTAGE 0.5 1.0 1.5 2.0 2.5 IOUT - Output Current (A) C003 3.0 C004 Figure 4. 1.05-V OUTPUT VOLTAGE vs OUTPUT CURRENT 1.100 VOUT - Output Voltage (V) Vout (50 mV/div) 1.075 IOUT = 10 mA 1.050 IOUT = 1 A Iout (2 A/div) 1.025 100 us/div 1.000 0 5 10 15 VIN - Input Voltage (V) 20 25 C005 Figure 5. 1.05-V OUTPUT VOLTAGE vs INPUT VOLTAGE 8 Figure 6. 1.05-V, LOAD TRANSIENT RESPONSE Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS54339E TPS54339E www.ti.com SLVSBM0A – DECEMBER 2012 – REVISED DECEMBER 2012 TYPICAL CHARACTERISTICS VIN = 12 V, TA = 25°C (unless otherwise noted). 100 90 Efficiency (%) EN (10 V/div) VREG5 (5 V/div) Vout (0.5 V/div) 80 VO = 5 V VO = 3.3 V 70 VO = 1.8 V 60 50 400 us/div 40 0.0 0.5 1.0 1.5 2.0 2.5 IOUT - Output Current (A) Figure 7. START-UP WAVE FORM VO = 5 V 80 Efficiency (%) fsw - Switching Frequency (kHz) 900 90 VO = 3.3 V 60 50 40 VO = 1.8 V 30 20 10 0 0.001 850 800 750 VO = 3.3 V VO = 5.0 V 700 650 600 VO = 1.8 V 550 500 VO = 1.5 V 450 VO = 1.05 V 400 0.01 0.1 IOUT - Output Current (A) 0 5 10 15 20 VIN - Input Voltage (V) C007 Figure 9. LIGHT LOAD EFFICIENCY vs OUTPUT CURRENT 25 C008 Figure 10. SWITCHING FREQUENCY vs INPUT VOLTAGE (IO = 1 A) 800 0.780 700 0.775 IO = 1 A 600 VFB Voltage (V) fsw - Switching Frequency (kHz) C006 Figure 8. EFFICIENCY vs OUTPUT CURRENT 100 70 3.0 500 400 VO = 3.3 V 300 200 VO = 1.8 V 0.770 0.765 0.760 0.755 100 VO = 1.05 V 0 0.01 0.750 0.10 1.00 IO - Output Current (A) 10.00 ±50 C009 Figure 11. SWITCHING FREQUENCY vs OUTPUT CURRENT 0 50 100 Tj - Junction Temperature (ƒC) Product Folder Links: TPS54339E C010 Figure 12. VFB VOLTAGE vs JUNCTION TEMPERATURE (IO = 1 A) Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated 150 9 TPS54339E SLVSBM0A – DECEMBER 2012 – REVISED DECEMBER 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) VIN = 12 V, TA = 25°C (unless otherwise noted). Vo = 1.05 V Vo (10 mV/div) Vo = 1.05 V SW (5 V/div) Vo (20 mV/div) SW (5 V/div) 400 ns/div 4 us/div Figure 13. VOLTAGE RIPPLE AT OUTPUT (IO = 3A) Figure 14. VOLTAGE RIPPLE AT OUTPUT (IO = 30 mA) Vo = 1.05 V VIN (50 mV/div) SW (5 V/div) 400 ns/div Figure 15. VOLTAGE RIPPLE AT INPUT (IO = 3 A) 10 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS54339E TPS54339E www.ti.com SLVSBM0A – DECEMBER 2012 – REVISED DECEMBER 2012 DESIGN GUIDE Step-By-Step Design Procedure To • • • • • begin the design process, the user must know a few application parameters: Input voltage range Output voltage Output current Output voltage ripple Input voltage ripple VIN 4.5 to 23 V VIN C1 10 µF C2 C3 10 µF 0.1 µF 1 U1 2 TPS54339EDDA R 3 10.0 kΩ 7 EN 5 VOUT R 1 8.25 kΩ VIN VBST VFB 6 R2 22.1 kΩ 1 C4 EN SW VREG5 8 1 C 7 0.1 µF 3 4 SS C5 0.47 µF 2 GND VOUT 1.05 V 3A L1 VOUT 2.2 uH C8 C9 C10 22 µF 22 µF 22 µF PwPd C6 8200 pF 9 1 1 Not Installed Figure 16. Shows the schematic diagram for this design example. Output Voltage Resistors Selection The output voltage is set with a resistor divider from the output node to the VFB pin. It is recommended to use 1% tolerance or better divider resistors. Start by using Equation 3 to calculate VOUT. To improve efficiency at light loads consider using larger value resistors, high resistance is more susceptible to noise, and the voltage errors from the VFB input current are more noticeable. V = 0.765 x OUT æ ö çç1 + R1÷÷ ÷ çè R2 ø (3) Output Filter Selection The output filter used with the TPS54339E is an LC circuit. This LC filter has double pole at: F = P 2p L 1 OUT x COUT (4) Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS54339E 11 TPS54339E SLVSBM0A – DECEMBER 2012 – REVISED DECEMBER 2012 www.ti.com At low frequencies, the overall loop gain is set by the output set-point resistor divider network and the internal gain of the TPS54339E. The low frequency phase is 180 degrees. At the output filter pole frequency, the gain rolls off at a –40 dB per decade rate and the phase drops rapidly. D-CAP2™ introduces a high frequency zero that reduces the gain roll off to –20 dB per decade and increases the phase to 90 degrees one decade above the zero frequency. The inductor and capacitor selected for the output filter must be selected so that the double pole of Equation 4 is located below the high frequency zero but close enough that the phase boost provided be the high frequency zero provides adequate phase margin for a stable circuit. To meet this requirement use the values recommended in Table 1 Table 1. Recommended Component Values Output Voltage (V) (1) C4 (pF) (1) R1 (kΩ) R2 (kΩ) L1 (µH) C8 + C9 (µF) Min Typ Max Min Typ Max Min Max 1 6.81 22.1 5 150 220 1.5 2.2 4.7 22 68 1.05 8.25 22.1 5 150 220 1.5 2.2 4.7 22 68 1.2 12.7 22.1 5 100 1.5 2.2 4.7 22 68 1.5 21.5 22.1 5 68 1.5 2.2 4.7 22 68 1.8 30.1 22.1 5 22 2.2 3.3 4.7 22 68 2.5 49.9 22.1 5 22 2.2 3.3 4.7 22 68 3.3 73.2 22.1 5 22 2.2 3.3 4.7 22 68 5 124 22.1 5 22 3.3 4.7 22 68 6.5 165 22.1 5 22 3.3 4.7 22 68 Optional Since the DC gain is dependent on the output voltage, the required inductor value increases as the output voltage increases. Additional phase boost can be achieved by adding a feed forward capacitor (C4) in parallel with R1. The amount of available phase boost is dependent on the output voltage. Higher output voltages will allow greater phase boost. The inductor peak-to-peak ripple current, peak current and RMS current are calculated using Equation 5, Equation 6 and Equation 7. The inductor saturation current rating must be greater than the calculated peak current and the RMS or heating current rating must be greater than the calculated RMS current. Use 600 kHz for fSW. Use 600 kHz for fSW. Make sure the chosen inductor is rated for the peak current of Equation 6 and the RMS current of Equation 7. VIN(MAX) - VOUT VOUT ´ IlP -P = VIN(MAX) LO ´ ¦ SW (5) IlPEAK =IO + IlP-P 2 ILO(RMS) = IO2 (6) 1 + IlP -P2 12 (7) For this design example, the calculated peak current is 3.36 A and the calculated RMS current is 3.01 A. The inductor used is a TDK CLF7045T-2R2N with a peak current rating of 5.5 A and an RMS current rating of 4.3 A. For high current designs, TDK SPM6530T-4R7M 4.7µH is also recommended. The SPM6530 series has a higher current rating than the CLF7045 series. The capacitor value and ESR determines the amount of output voltage ripple. The TPS54339E is intended for use with ceramic or other low ESR capacitors. Recommended values range from 22µF to 68µF. Use Equation 8 to determine the required RMS current rating for the output capacitor. I Co(RMS) = VOUT x (VIN - VOUT ) 12 x VIN x LO x fSW (8) For this design two TDK C3216X5R0J226M 22µF output capacitors are used. The typical ESR is 2 mΩ each. The calculated RMS current is 0.21 A and each output capacitor is rated for 4A. 12 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS54339E TPS54339E www.ti.com SLVSBM0A – DECEMBER 2012 – REVISED DECEMBER 2012 Input Capacitor Selection The TPS54339E requires an input decoupling capacitor and a bulk capacitor is needed depending on the application. A ceramic capacitor over 10 μF is recommended for the decoupling capacitor. An additional 0.1 µF capacitor from pin 2 to ground is optional to provide additional high frequency filtering. The capacitor voltage rating needs to be greater than the maximum input voltage. Bootstrap Capacitor Selection A 0.1 µF. ceramic capacitor must be connected between the VBST to SW pin for proper operation. It is recommended to use a ceramic capacitor. VREG5 Capacitor Selection A 0.47 µF. ceramic capacitor must be connected between the VREG5 to GND pin for proper operation. It is recommended to use a ceramic capacitor. THERMAL INFORMATION This 8-pin DDA package incorporates an exposed thermal pad that is designed to be directly to an external heartsick. The thermal pad must be soldered directly to the printed board (PCB). After soldering, the PCB can be used as a heartsick. In addition, through the use of thermal vias, the thermal pad can be attached directly to the appropriate copper plane shown in the electrical schematic for the device, or alternatively, can be attached to a special heartsick structure designed into the PCB. This design optimizes the heat transfer from the integrated circuit (IC). For additional information on the exposed thermal pad and how to use the advantage of its heat dissipating abilities, see the Technical Brief, PowerPAD™ Thermally Enhanced Package, Texas Instruments Literature No. SLMA002 and Application Brief, PowerPAD™ Made Easy, Texas Instruments Literature No. SLMA004. The exposed thermal pad dimensions for this package are shown in the following illustration. 8 5 Exposed Thermal Pad 2,40 1,65 1 3,10 2,65 4 Figure 17. Thermal Pad Dimensions Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS54339E 13 TPS54339E SLVSBM0A – DECEMBER 2012 – REVISED DECEMBER 2012 www.ti.com LAYOUT CONSIDERATIONS 1. Keep the input switching current loop as small as possible. 2. Keep the SW node as physically small and short as possible to minimize parasitic capacitance and inductance and to minimize radiated emissions. Kelvin connections should be brought from the output to the feedback pin of the device. 3. Keep analog and non-switching components away from switching components. 4. Make a single point connection from the analog ground to power ground. 5. Do not allow switching current to flow under the device. 6. Keep the pattern lines for VIN and PGND broad. 7. Exposed pad of device must be connected to PGND with solder. 8. VREG5 capacitor should be placed near the device, and connected to PGND. 9. Output capacitor should be connected to a broad pattern of the PGND. 10. Voltage feedback loop should be as short as possible, and preferably with ground shield. 11. Lower resistor of the voltage divider which is connected to the VFB pin should be tied to analog ground trace. 12. Providing sufficient via is preferable for VIN, SW and PGND connection. 13. VIN input bypass capacitor and VIN high frequency bypass capacitor must be placed as near as possible to the device. 14. Performance based on four layer printed circuit board. Additional Thermal Vias VIN INPUT BYPASS CAPACITOR SOFT START CAP TO ENABLE CONTROL Connection to POWER GROUND on internal or bottom layer VIN BOOST CAPACITOR VBST SS VIN EN SW VREG5 VOUT OUTPUT INDUCTOR OUTPUT FILTER CAPACITOR GND VIN INPUT BYPASS CAPACITOR EXPOSED POWERPAD AREA BIAS CAP FEEDBACK RESISTORS VFB Additional Thermal Vias POWER GROUND ANALOG GROUND TRACE Figure 18. PCB Layout 14 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPS54339E PACKAGE OPTION ADDENDUM www.ti.com 27-Dec-2012 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Qty Drawing Eco Plan Lead/Ball Finish (2) MSL Peak Temp Samples (3) (Requires Login) TPS54339EDDA ACTIVE SO PowerPAD DDA 8 75 Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR & no Sb/Br) TPS54339EDDAR ACTIVE SO PowerPAD DDA 8 2500 Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR & no Sb/Br) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 26-Dec-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device TPS54339EDDAR Package Package Pins Type Drawing SO Power PAD DDA 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.8 Pack Materials-Page 1 6.4 B0 (mm) K0 (mm) P1 (mm) 5.2 2.1 8.0 W Pin1 (mm) Quadrant 12.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 26-Dec-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPS54339EDDAR SO PowerPAD DDA 8 2500 366.0 364.0 50.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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