MICROSS LS124_PDIP

LS124
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems replaces discontinued Intersil IT124
The LS124 is a monolithic pair of Super-Beta NPN
transistors mounted in a single P-DIP package. The
monolithic dual chip design reduces parasitics and
gives better performance while ensuring extremely tight
matching. The LS124 is a direct replacement for
discontinued Intersil IT124.
The 8 Pin P-DIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
LS124 Features:
ƒ
ƒ
ƒ
Very high gain
Tight matching
Low Output Capacitance
FEATURES Direct Replacement for INTERSIL LS124 HIGH GAIN LOW OUTPUT CAPACITANCE VBE tracking
ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) hFE ≥ 1500 @ 1 AND 10µA ≤ 2.0pF ≤ 5.0µV°C Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (One side) Continuous Power Dissipation (Both sides) Linear Derating factor (One side) Linear Derating factor (Both sides) Maximum Currents Collector Current MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VBE1 – VBE2 | Base Emitter Voltage Differential ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature |IB1 – IB2 | Base Current Differential ‐65°C to +200°C ‐55°C to +150°C 250mW 500mW 2.3mW/°C 4.3mW/°C 10mA MIN ‐‐ ‐‐ TYP 2 5 MAX 5 15 UNITS mV µV/°C ‐‐ ‐‐ 0.6 nA CONDITIONS IC = 10µA, VCE = 1V IC = 10µA, VCE = 1V TA = ‐55°C to +125°C IC = 10µA, VCE = 1V Click To Buy
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS MIN. BVCBO Collector to Base Voltage 2 BVCEO Collector to Emitter Voltage 2 BVEBO Emitter‐Base Breakdown Voltage 6.2 BVCCO Collector to Collector Voltage 100 hFE DC Current Gain 1500 1500 VCE(SAT) Collector Saturation Voltage ‐‐ IEBO Emitter Cutoff Current ‐‐ ICBO Collector Cutoff Current ‐‐ COBO Output Capacitance ‐‐ CC1C2 Collector to Collector Capacitance ‐‐ IC1C2 Collector to Collector Leakage Current ‐‐ fT Current Gain Bandwidth Product 100 NF Narrow Band Noise Figure ‐‐ TYP. ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ MAX. ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 0.5 100 100 2 2 10 ‐‐ 3 UNITS V V V V V pA pA pF pF nA MHz dB CONDITIONS IC = 10µA, IE = 0 IC = 10µA, IB = 0 IE = 10µA, IC = 02 IC = 10µA, IE = 0 IC = 1µA, VCE = 1V IC = 10µA, VCE = 1V IC = 1mA, IB = 0.1mA IC = 0, VEB = 3V IE = 0, VCB = 1V IE = 0, VCB = 1V VCC = 0V VCC = ±50V IC = 100µA, VCE = 1V IC = 10µA, VCE = 3V, BW=200Hz, RG= 10KΩ, f = 1KHz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. Available Packages:
P-DIP (Top View)
LS124 in P-DIP
LS124 available as bare die
Please contact Micross for full package and die dimensions:
Email: [email protected]
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.