LS301 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS301 is a monolithic pair of high voltage SuperBeta NPN transistors mounted in a single SOT-23 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The 6 Pin SOT-23 provides ease of manufacturing, and a lower cost assembly option. (See Packaging Information). LS301 Features: Very high gain Tight matching Low Output Capacitance FEATURES HIGH GAIN LOW OUTPUT CAPACITANCE TIGHT VBE MATCHING HIGH ft ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) hFE ≥ 2000 @ 1µA TYP. COBO ≤ 2.0pF |VBE1 – VBE2 |= 0.2mV TYP. 100MHz Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (One side) Continuous Power Dissipation (Both sides) Linear Derating factor (One side) Linear Derating factor (Both sides) Maximum Currents Collector Current MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VBE1 – VBE2 | Base Emitter Voltage Differential ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature |IB1 – IB2 | Base Current Differential MIN ‐‐ ‐‐ TYP 0.2 1 ‐‐ ‐‐ ‐65°C to +200°C ‐55°C to +150°C 250mW 500mW 2.3mW/°C 4.3mW/°C 5mA MAX 1 5 UNITS mV µV/°C 0.5 1 nA 5 ‐‐ % CONDITIONS IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V Click To Buy hFE1 /hFE2 DC Current Gain Differential ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. BVCBO Collector to Base Voltage 18 BVCEO Collector to Emitter Voltage 18 BVEBO Emitter‐Base Breakdown Voltage 6.2 BVCCO Collector to Collector Voltage 100 ‐‐ DC Current Gain hFE 2000 ‐‐ VCE(SAT) Collector Saturation Voltage ‐‐ IEBO Emitter Cutoff Current ‐‐ ICBO Collector Cutoff Current ‐‐ COBO Output Capacitance ‐‐ CC1C2 Collector to Collector Capacitance ‐‐ IC1C2 Collector to Collector Leakage Current ‐‐ fT Current Gain Bandwidth Product 100 NF Narrow Band Noise Figure ‐‐ TYP. ‐‐ ‐‐ ‐‐ ‐‐ 2000 ‐‐ 2000 ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ MAX. ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 0.5 0.2 100 2 2 0.5 ‐‐ 3 UNITS V V V V V pA pA pF pF nA MHz dB IC = 10µA, VCE = 5V CONDITIONS IC = 10µA, IE = 0 IC = 10µA, IB = 0 IE = 10µA, IC = 02 IC = 10µA, IE = 0 IC = 1µA, VCE = 5V IC = 10µA, VCE = 5V IC = 500µA, VCE = 5V IC = 1mA, IB = 0.1mA IC = 0, VEB = 3V IE = 0, VCB = 10V IE = 0, VEB = 1V VCC = 0V VCC = ±80V IC = 200µA, VCE = 5V IC = 10µA, VCE = 3V, BW=200Hz, RG= 10KΩ, f = 1KHz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. SOT-23 (Top View) Available Packages: LS301 in SOT-23 LS301 available as bare die Please contact Micross for full package and die dimensions: Email: [email protected] Web: www.micross.com/distribution.aspx Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.