MICROSS LS351_SOIC

LS351
MONOLITHIC DUAL
PNP TRANSISTOR
Linear Systems Monolithic Dual PNP Transistor
The LS351 is a monolithic pair of PNP transistors
mounted in a single SOIC package. The monolithic dual
chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The 8 Pin SOIC provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
LS351 Features:
ƒ
ƒ
ƒ
Very high gain
Tight matching
Low Output Capacitance
FEATURES HIGH GAIN TIGHT VBE MATCHING HIGH ft ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) hFE ≥ 150 @ 10µA‐1mA |VBE1 – VBE2 |= 0.4mV TYP. 275MHz TYP. @ 1mA Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (One side) Continuous Power Dissipation (Both sides) Linear Derating factor (One side) Linear Derating factor (Both sides) Maximum Currents Collector Current MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VBE1 – VBE2 | Base Emitter Voltage Differential ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature |IB1 – IB2 | Base Current Differential |∆ (IB1 – IB2)|/°C Base Current Differential Change with Temperature hFE1 /hFE2 DC Current Gain Differential ‐65°C to +200°C ‐55°C to +150°C 250mW 500mW 2.3mW/°C 4.3mW/°C 10mA MIN ‐‐ ‐‐ TYP 0.4 1 MAX 1.0 10 UNITS mV µV/°C ‐‐ ‐‐ ‐‐ ‐‐ 5 0.3 nA nA/°C ‐‐ 5 ‐‐ % CONDITIONS IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V Click To Buy
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS MIN. BVCBO Collector to Base Voltage 45 BVCEO Collector to Emitter Voltage 45 BVEBO Emitter‐Base Breakdown Voltage 6.2 BVCCO Collector to Collector Voltage 60 150 DC Current Gain hFE 150 150 VCE(SAT) Collector Saturation Voltage ‐‐ IEBO Emitter Cutoff Current ‐‐ ICBO Collector Cutoff Current ‐‐ COBO Output Capacitance ‐‐ CC1C2 Collector to Collector Capacitance ‐‐ IC1C2 Collector to Collector Leakage Current ‐‐ fT Current Gain Bandwidth Product 200 NF Narrow Band Noise Figure ‐‐ TYP. ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ MAX. ‐‐ ‐‐ ‐‐ ‐‐ 600 600 ‐‐ 0.5 0.2 0.2 2 2 0.5 ‐‐ 3 UNITS V V V V V nA nA pF pF nA MHz dB CONDITIONS IC = 10µA, IE = 0 IC = 10µA, IB = 0 IE = 10µA, IC = 02 IC = 10µA, IE = 0 IC = 10µA, VCE = 5V IC = 100µA, VCE = 5V IC = 1mA, VCE = 5V IC = 1mA, IB = 0.1mA IE = 0, VCB = 3V IE = 0, VCB = 20V IE = 0, VCB = 5V VCC = 0V VCC = ±45V IC = 1mA, VCE = 5V IC = 100µA, VCE = 5V, BW=200Hz, RG= 10KΩ, f = 1KHz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. SOIC (Top View)
Available Packages:
LS351 in SOIC
LS351 available as bare die
Please contact Micross for full package and die dimensions:
Email: [email protected]
Web: www.micross.com/distribution.aspx
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