LS351 MONOLITHIC DUAL PNP TRANSISTOR Linear Systems Monolithic Dual PNP Transistor The LS351 is a monolithic pair of PNP transistors mounted in a single SOIC package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The 8 Pin SOIC provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). LS351 Features: Very high gain Tight matching Low Output Capacitance FEATURES HIGH GAIN TIGHT VBE MATCHING HIGH ft ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) hFE ≥ 150 @ 10µA‐1mA |VBE1 – VBE2 |= 0.4mV TYP. 275MHz TYP. @ 1mA Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (One side) Continuous Power Dissipation (Both sides) Linear Derating factor (One side) Linear Derating factor (Both sides) Maximum Currents Collector Current MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VBE1 – VBE2 | Base Emitter Voltage Differential ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature |IB1 – IB2 | Base Current Differential |∆ (IB1 – IB2)|/°C Base Current Differential Change with Temperature hFE1 /hFE2 DC Current Gain Differential ‐65°C to +200°C ‐55°C to +150°C 250mW 500mW 2.3mW/°C 4.3mW/°C 10mA MIN ‐‐ ‐‐ TYP 0.4 1 MAX 1.0 10 UNITS mV µV/°C ‐‐ ‐‐ ‐‐ ‐‐ 5 0.3 nA nA/°C ‐‐ 5 ‐‐ % CONDITIONS IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V Click To Buy ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. BVCBO Collector to Base Voltage 45 BVCEO Collector to Emitter Voltage 45 BVEBO Emitter‐Base Breakdown Voltage 6.2 BVCCO Collector to Collector Voltage 60 150 DC Current Gain hFE 150 150 VCE(SAT) Collector Saturation Voltage ‐‐ IEBO Emitter Cutoff Current ‐‐ ICBO Collector Cutoff Current ‐‐ COBO Output Capacitance ‐‐ CC1C2 Collector to Collector Capacitance ‐‐ IC1C2 Collector to Collector Leakage Current ‐‐ fT Current Gain Bandwidth Product 200 NF Narrow Band Noise Figure ‐‐ TYP. ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ MAX. ‐‐ ‐‐ ‐‐ ‐‐ 600 600 ‐‐ 0.5 0.2 0.2 2 2 0.5 ‐‐ 3 UNITS V V V V V nA nA pF pF nA MHz dB CONDITIONS IC = 10µA, IE = 0 IC = 10µA, IB = 0 IE = 10µA, IC = 02 IC = 10µA, IE = 0 IC = 10µA, VCE = 5V IC = 100µA, VCE = 5V IC = 1mA, VCE = 5V IC = 1mA, IB = 0.1mA IE = 0, VCB = 3V IE = 0, VCB = 20V IE = 0, VCB = 5V VCC = 0V VCC = ±45V IC = 1mA, VCE = 5V IC = 100µA, VCE = 5V, BW=200Hz, RG= 10KΩ, f = 1KHz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. SOIC (Top View) Available Packages: LS351 in SOIC LS351 available as bare die Please contact Micross for full package and die dimensions: Email: [email protected] Web: www.micross.com/distribution.aspx Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.