MICROSS LS3250C_SOIC

LS3250C
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems Log Conformance Monolithic Dual NPN
The LS3250C is a monolithic pair of NPN transistors
mounted in a single SOIC package. The monolithic dual
chip design reduces parasitics and is ideal for use in
tracking applications.
The 8 Pin SOIC provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
LS3250C Features:
ƒ
ƒ
Tight matching
Low Output Capacitance
FEATURES TIGHT MATCHING THERMAL TRACKING ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) ≤ 10mV ≤ 15µV / °C
Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Currents Collector Current Maximum Voltage Collector to Collector Voltage MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VBE1 – VBE2 | Base Emitter Voltage Differential ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature |IB1 – IB2 | Base Current Differential |∆ (IB1 – IB2)|/ ∆T Base Current Differential Change with Temperature hFE1 /hFE2 DC Current Gain Differential ‐65°C to +150°C ‐55°C to +150°C TBD 50mA 80V MIN ‐‐ ‐‐ TYP ‐‐ ‐ MAX 10 15 UNITS mV µV/°C ‐‐ ‐‐ ‐‐ ‐‐ 10 1.0 nA nA/°C ‐‐ ‐‐ 15 % CONDITIONS IC = 10mA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐40°C to +85°C IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐40°C to +85°C IC = 10µA, VCE = 5V Click To Buy
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS MIN. BVCBO Collector to Base Voltage 20 BVCEO Collector to Emitter Voltage 20 BVEBO2 Emitter‐Base Breakdown Voltage 6.2 BVCCO Collector to Collector Voltage 80 50 DC Current Gain hFE 40 40 VCE(SAT) Collector Saturation Voltage ‐‐ IEBO Emitter Cutoff Current ‐‐ ICBO Collector Cutoff Current ‐‐ COBO Output Capacitance ‐‐ IC1C2 Collector to Collector Leakage Current ‐‐ fT Current Gain Bandwidth Product ‐‐ NF Narrow Band Noise Figure ‐‐ TYP. ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ MAX. ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 1.2 0.2 0.2 2 1 600 3 UNITS V V V V V nA nA pF nA MHz dB CONDITIONS IC = 10mA, IE = 0 IC = 10µA, IB = 0 IE = 10µA, IC = 0 IC = 10µA, IE = 0 IC = 10µA, VCE = 5V IC = 100µA, VCE = 5V IC = 1mA, VCE = 5V IC = 100mA, IB = 10mA IC = 0A, VCB = 3V IE = 0A, VCB = 20V IE = 0A, VCB = 10V VCC = ±80V IC = 1mA, VCE = 5V IC = 100µA, VCE = 5V, BW=200Hz, RB= 10Ω, f = 1KHz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. SOIC (Top View)
Available Packages:
LS3250C in SOIC
LS3250C available as bare die
Please contact Micross for full package and die dimensions:
Email: [email protected]
Web: www.micross.com/distribution.aspx
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