LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 2000 @ 1.0µA TYP. VERY HIGH GAIN LOW OUTPUT CAPACITANCE COBO ≤2.0pF TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 100MHz C1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Collector Current 5mA IC Maximum Temperatures Storage Temperature Operating Junction Temperature E1 3 5 E2 B1 2 ONE SIDE 250mW 2.3mW/°C 6 B2 1 C1 -65° to +200°C +150°C B1 Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor C2 BOTH SIDES 500mW 4.3mW/°C E1 E2 7 C2 B2 26 X 29 MILS BOTTOM VIEW ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS301 LS302 Collector to Base Voltage 18 35 BVCBO LS303 10 MIN. BVCEO Collector to Emitter Voltage 18 35 10 MIN. V IC = 10µA BVEBO Emitter-Base Breakdown Voltage 6.2 6.2 6.2 MIN. V IE = 10µA BVCCO Collector to Collector Voltage 100 100 100 MIN. V IC = 10µA IE = 0 hFE DC Current Gain 2000 1000 2000 TYP. IC = 1µA VCE = 5V hFE DC Current Gain 2000 1000 2000 MIN. IC = 10µA VCE = 5V hFE DC Current Gain 2000 1000 2000 TYP. IC = 500µA VCE = 5V 0.5 0.5 0.5 MAX. IC = 1mA IB = 0.1mA VCE(SAT) Collector Saturation Voltage UNITS V V CONDITIONS IC = 10µA IE = 0 IB = 0 IC = 0 NOTE 2 ICBO Collector Cutoff Current 100 100 100 MAX. pA IE = 0 VCB = NOTE 3 IEBO Emitter Cutoff Current 0.2 0.2 0.2 MAX. pA IE = 0 VEB = 3V COBO Output Capacitance 2 2 2 MAX. pF IE = 0 VCB = 1V CC1C2 Collector to Collector Capacitance 2 2 2 MAX. pF VCC = 0 IC1C2 Collector to Collector Leakage Current 0.5 0.5 0.5 MAX. nA VCC = NOTE 4 fT Current Gain Bandwidth Product 100 100 100 MIN. MHz IC = 200µA VCE = 5V NF Narrow Band Noise Figure 3 3 3 MAX. dB IC = 10µA VCE = 3V BW = 200Hz f = 1KHz RG = 10 KΩ Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 MATCHING CHARACTERISTICS SYMBOL CHARACTERISTICS Base Emitter Voltage Differential |VBE1-VBE2| ∆|(VBE1-VBE2)|/°C |IB1- IB2| LS301 0.2 1 LS303 0.2 1 UNITS TYP. mV MAX. mV CONDITIONS IC = 10 µA Base Emitter Voltage Differential 1 1 1 TYP. µV/°C Change with Temperature 5 5 5 MAX. µV/°C Base Current Differential hFE1/hFE2 LS302 0.2 1 DC Current Gain Differential TO-71 0.030 MAX. 0.150 0.115 6 LEADS 0.500 MIN. 0.019 DIA. 0.016 +125°C 0.5 1 0.5 TYP. nA IC = 10µA VCE = 1V 5 1.5 MAX. nA IC = 10µA VCE = 5V 5 5 5 TYP. % IC = 10µA VCE = 5V TO-78 0.230 DIA. 0.209 VCE = 5V to 1 P-DIP Six Lead 0.195 DIA. 0.175 IC = 10 µA T = -55°C VCE = 5V 0.305 0.335 0.320 (8.13) 0.290 (7.37) 0.335 0.370 MAX. 0.040 0.165 0.185 0.016 0.019 DIM. A MIN. 0.500 0.016 0.021 DIM. B SEATING PLANE 0.405 (10.29) MAX. C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.200 0.100 0.050 5 6 1 8 0.046 0.036 7 SOIC 2 3 4 1 5 8 7 6 2 3 4 45° 0.100 0.029 0.045 0.150 (3.81) 0.158 (4.01) 0.100 45° 0.048 0.028 0.028 0.034 0.188 (4.78) 0.197 (5.00) C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.228 (5.79) 0.244 (6.20) NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µAmps. 3. For LS301 & LS302: VCB= 10V; for LS303: VCB = 5V. 4. For LS301 & LS302: VCC= ±80V; for LS303: VCC = ±20V. Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261