SST309 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST309 The SST309 is a high frequency n-channel JFET offering a wide range and low noise performance. The SOT-23 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES DIRECT REPLACEMENT FOR SILICONIX SST309 OUTSTANDING HIGH FREQUENCY GAIN LOW HIGH FREQUENCY NOISE ABSOLUTE MAXIMUM RATINGS @ 25°C1 Gpg = 11.5dB NF = 2.7dB Maximum Temperatures Storage Temperature ‐55°C to +150°C High Power Low Noise gain Operating Junction Temperature ‐55°C to +135°C Dynamic Range greater than 100dB Maximum Power Dissipation Easily matched to 75Ω input Continuous Power Dissipation 350mW SST309 Applications: MAXIMUM CURRENT Gate Current 10mA UHV / VHF Amplifiers MAXIMUM VOLTAGES Mixers Gate to Drain Voltage or Gate to Source Voltage ‐25V Oscillators SST309 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNIT CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐25 ‐‐ ‐‐ V VDS = 0V, IG = ‐1µA VGS(F) Gate to Source Forward Voltage 0.7 ‐‐ 1 VDS = 0V, IG = 10mA VGS(off) Gate to Source Cutoff Voltage ‐1 ‐‐ ‐4 VDS = 10V, ID = 1nA IDSS Drain to Source Saturation Current2 12 ‐‐ 30 mA VDS = 10V, VGS = 0V IG Gate Operating Current (Note 3) ‐‐ ‐15 ‐‐ pA VDG = 9V, ID = 10mA rDS(on) Drain to Source On Resistance ‐‐ 35 ‐‐ Ω VGS = 0V, ID = 1mA SST309 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNIT CONDITIONS gfs Forward Transconductance 10 14 ‐‐ mS VDS = 10V, ID = 10mA , f = 1kHz gos Output Conductance ‐‐ 110 250 µS Ciss Input Capacitance ‐‐ 4 5 pF VDS = 10V, VGS = ‐10V , f = 1MHz Crss Reverse Transfer Capacitance ‐‐ 1.9 2.5 en Equivalent Noise Voltage 6 ‐‐ ‐‐ nV/√Hz VDS = 10V, ID = 10mA , f = 100Hz SST309 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP MAX UNIT CONDITIONS SST309 Benefits: Click To Buy NF Noise Figure Gpg Power Gain3 gfg Forward Transconductance gog Output Conductance f = 105MHz f = 450MHz f = 105MHz f = 450MHz f = 105MHz ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 1.5 2.7 16 11.5 14 ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ f = 450MHz ‐‐ 13 ‐‐ f = 105MHz ‐‐ 0.16 ‐‐ f = 450MHz ‐‐ 0.55 ‐‐ dB dB mS VDS = 10V, ID = 10mA Note 1 ‐ Absolute maximum ratings are limiting values above which SST309 serviceability may be impaired. Note 2 ‐ Pulse test : PW ≤ 300µs, Duty Cycle ≤ 3% Note 3 ‐ Measured at optimum input noise match Components Europe Micross Available Packages: SOT-23 (Top View) SST309 in SOT-23 SST309 in bare die. Tel: +44 1603 788967 Email: [email protected] Web: http://www.micross.com/distribution Please contact Micross for full package and die dimensions Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: [email protected] Web: www.micross.com/distribution.aspx