Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is supplied to the gate voltage 1, the output power and the drain current increase as the gate voltage 2 increases. The output power and the drain current increase substantially with the gate voltage 2 around 0V (minimum) under the condition when the gate voltage 1 is kept in 3.4V. The nominal output power becomes available at the state that VGG2 is 4V (typical) and 5V (maximum). At this point, VGG1 has to be kept in 3.4V. At VGG1=3.4V & VGG2=5V, the typical gate currents are 0.4mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltages and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.8V, VGG1=VGG2=0V) BLOCK DIAGRAM 2 3 1 4 5 1 RF Input added Gate Voltage 1(Pin&VGG1) 2 Gate Voltage 2(VGG2), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) • Pout>45W, ηT>33% @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW • Broadband Frequency Range: 896-941MHz • Metal cap structure that makes the improvements of RF radiation simple • Low-Power Control Current IGG1+IGG2=0.4mA(typ) @ VGG1=3.4V, VGG2=5V • Module Size: 67 x 19.4 x 9.9 mm • Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power. PACKAGE CODE: H2M RoHS COMPLIANCE • RA45H8994M1 is a RoHS compliant product. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever, it is applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA45H8994M1-101 Antistatic tray, 10 modules/tray 25 Jun 2010 RA45H8994M1 1/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA45H8994M1 MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER CONDITIONS RATING UNIT VDD Drain Voltage VGG1=3.4V ± 7%, VGG2<5V, Pin=0W 17 V VGG1 Gate Voltage 1 VGG2<5V, VDD<12.8V, Pin=50mW 4.5 V VGG2 Gate Voltage 2 VGG1=3.4V ± 7%, VDD<12.8V, Pin=50mW 6 V 100 mW Pin Input Power Pout Output Power Tcase(OP) Tstg f=896-941MHz, Operation Case Temperature Range VGG1=3.4V ± 7%, VGG2<5V Storage Temperature Range 60 W -30 to +100 °C -40 to +110 °C The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER F CONDITIONS Frequency Range MIN TYP MAX UNIT 896 - 941 MHz Pout 1 Output Power 1 VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW 45 - - W ηT Total Efficiency VDD=12.8V 33 - - % 2fo nd Harmonic VGG1=3.4V - - -40 dBc nd Harmonic VGG2=5V - - -40 dBc 2 3fo 3 ρin Input VSWR Pin=50mW - - 3:1 — IDD Leakage Current VDD=17V, VGG1=VGG2=0V, Pin=0W - - 1 mA Pout 2 Output Power 2* VDD=15.2V, VGG1=3.4V, VGG2=1V, Pin=4dBm - - 2 W — Stability — Load VSWR Tolerance VDD=10.0-15.2V, Pin=1-100mW, 1.5<Pout <50W (VGG2 control, VGG1=3.4V), Load VSWR=3:1 VDD=15.2V, Pin=50mW, Pout=45W (VGG2 control, VGG1=3.4V), Load VSWR=20:1 No parasitic oscillation — No degradation or destroy — *: This is guaranteed as design value. All parameters, conditions, ratings, and limits are subject to change without notice. 25 Jun 2010 RA45H8994M1 2/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA45H8994M1 TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER, TOTAL EFFICIENCY, versus FREQUENCY 2nd, 3rd HARMONICS versus FREQUENCY 80 -30 Pout 60 50 40 ηT 30 V DD=12.8V V GG1=3.4V V GG2=5V Pin=50m W 20 V DD=12.8V V GG1=3.4V V GG2=5V Pin=50m W -40 HARMONICS (dBc) OUTPUT POWER Pout (W) TOTAL EFFICIENCY (%) 70 3 rd -50 -60 2 nd -70 10 860 870 880 890 900 910 920 930 940 950 960 FREQUENCY f (MHz) -80 860 870 880 890 900 910 920 930 940 950 960 FREQUENCY f (MHz) INPUT VSWR versus FREQUENCY INPUT VSWRρin (-) 5 V DD=12.8V V GG1=3.4V V GG2=5V Pin=50m W 4 3 2 ρ in 1 860 870 880 890 900 910 920 930 940 950 960 FREQUENCY f (MHz) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 60 16 30 12 10 8 f=896MHz V DD=12.8V V GG1=3.4V V GG2=5V I DD 4 0 40 -5 0 5 10 15 12 20 10 0 -10 20 -5 12 20 8 f=925M Hz V DD=12.8V V GG1=3.4V V GG2=5V 4 0 POWER GAIN Gp (dB) 30 OUTPUT POWER Pout (dBm) 16 DRAIN CURRENT I DD (A) POWER GAIN Gp (dB) OUTPUT POWER Pout (dBm) 20 Gp 0 5 10 40 15 12 20 10 -5 80 12 8 I DD Pout 6 20 4 10 2 0 0 6 8 10 12 14 OUTPUT POWER Pout (W) 90 16 DRAIN CURRENT IDD (A) OUTPUT POWER Pout (W) 18 10 4 0 5 10 15 20 OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 50 2 4 0 -10 14 30 8 f=941M Hz V DD=12.8V V GG1=3.4V V GG2=5V I DD INPUT POWER P in (dBm) f=896M Hz V GG1=3.4V V GG2=5V Pin=50m W 40 16 Gp 30 20 90 60 20 0 OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 70 20 24 INPUT POWER P in (dBm) 80 15 Pout 50 0 -5 10 60 24 -10 5 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER Pout 10 0 INPUT POWER P in (dBm) 60 I DD 4 0 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 40 8 f=915MHz V DD=12.8V V GG1=3.4V V GG2=5V I DD INPUT POWER P in (dBm) 50 16 30 0 -10 20 Gp DRAIN CURRENT I DD (A) 20 24 Pout 50 18 f=915M Hz V GG1=3.4V V GG2=5V Pin=50m W 70 60 16 14 12 50 10 I DD 40 8 Pout 30 6 20 4 10 2 0 16 0 2 DRAIN VOLTAGE V DD (V) DRAIN CURRENT IDD (A) 40 POWER GAIN Gp (dB) Gp DRAIN CURRENT I DD (A) 20 OUTPUT POWER Pout (dBm) 24 Pout 50 POWER GAIN Gp (dB) OUTPUT POWER Pout (dBm) 60 DRAIN CURRENTI DD (A) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 4 6 8 10 12 14 16 DRAIN VOLTAGE V DD (V) 25 Jun 2010 RA45H8994M1 3/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS COMPLIANCE TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 80 14 12 50 10 8 Pout 30 6 20 4 10 2 0 0 4 6 8 10 12 14 60 50 10 8 Pout 30 4 10 2 0 2 4 6 6 I DD 4 f=896MHz V DD=12.8V V GG1=3.4V Pin=50m W 2 0 OUTPUT POWER Pout(W) (dBm) 8 30 DRAIN CURRENT I DD (A) OUTPUT POWER Pout(W) (dBm) 10 40 2 3 4 40 8 30 6 I DD Pout (W) 20 6 4 f=925MHz V DD=12.8V V GG1=3.4V Pin=50m W 2 0 OUTPUT POWER Pout(W) (dBm) 8 30 DRAIN CURRENT I DD (A) OUTPUT POWER Pout(W) (dBm) 10 40 0 0 1 2 3 0 1 4 40 8 30 6 I DD 20 Pout (W) 10 6 20 4 I DD 10 2 Pout (W) 0 4 OUTPUT POWER Pout(W) (dBm) 8 DRAIN CURRENT I DD (A) OUTPUT POWER Pout(W) (dBm) Pout (dBm ) 3 0 12 f=915MHz V DD=12.8V V GG1=3.4V Pin=4dBm 50 40 Pout (dBm ) 30 6 20 4 I DD Pout (W) 10 2 0 0 4 OUTPUT POWER Pout(W) (dBm) 8 DRAIN CURRENT I DD (A) OUTPUT POWER Pout(W) (dBm) 10 8 Pout (dBm ) 30 6 20 4 I DD 10 2 Pout (W) 0 0 10 3 5 0 12 2 4 1 2 3 4 5 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE2 f=925MHz V DD=12.8V V GG1=3.4V Pin=4dBm 1 3 GATE VOLTAGE VGG2 (V) 60 0 2 60 5 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE2 40 2 0 1 GATE VOLTAGE VGG2 (V) 50 4 f=941MHz V DD=12.8V V GG1=3.4V Pin=50m W OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE2 10 2 10 GATE VOLTAGE VGG2 (V) 30 1 5 Pout (dBm ) 0 12 0 4 12 50 5 60 40 3 0 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE2 f=896MHz V DD=12.8V V GG1=3.4V Pin=4dBm 2 60 GATE VOLTAGE VGG2 (V) 50 2 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE2 Pout (dBm ) 10 4 f=915MHz V DD=12.8V V GG1=3.4V Pin=50m W 10 0 12 Pout (W) 10 Pout (dBm ) GATE VOLTAGE VGG2 (V) 60 I DD 16 12 50 5 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE2 20 14 60 GATE VOLTAGE VGG2 (V) 50 12 0 0 1 10 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE2 Pout (dBm ) 0 8 DRAIN VOLTAGE VDD (V) 12 10 6 20 16 60 Pout (W) 12 0 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE2 20 14 I DD 40 DRAIN VOLTAGE VDD (V) 50 16 DRAIN CURRENT I DD (A) 2 70 DRAIN CURRENT I DD (A) I DD 40 18 f=941MHz V GG1=3.4V V GG2=5V Pin=50m W DRAIN CURRENT I DD (A) 60 90 16 60 12 f=941MHz V DD=12.8V V GG1=3.4V Pin=4dBm 50 40 10 8 Pout (dBm ) 30 6 20 4 I DD 10 2 Pout (W) 0 0 0 5 GATE VOLTAGE VGG2 (V) DRAIN CURRENT I DD (A) 70 18 OUTPUT POWER Pout (W) f=925MHz V GG1=3.4V V GG2=5V Pin=50m W 80 DRAIN CURRENT IDD (A) OUTPUT POWER Pout (W) 90 DRAIN CURRENT IDD (A) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 1 2 3 4 5 GATE VOLTAGE VGG2 (V) 25 Jun 2010 RA45H8994M1 4/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA45H8994M1 OUTLINE DRAWING (mm) 67±1 ④ 18±1 10.7±1 ③ 15±1 ① ② 4±0.5 49.8±1 2-R2±0.5 19.4±1 (3.26) 60±1 12.5±1 0.6±0.2 17±1 44±1 （2.6） （9.9） 3.1+0.6/-0.4 7.3±0.5 56±1 1 RF Input added Gate Voltage 1(Pin & VGG1) 2 Gate Voltage 2(VGG2) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) 25 Jun 2010 RA45H8994M1 5/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA45H8994M1 TEST BLOCK DIAGRAM + DC Pow er Supply V GG1 Signal Generator Attenuator Preamplifier Attenuator Pow er Meter Directional Coupler DUT R1 C1 1 2 3 C3 VA GG1 Directional Coupler Attenuator Pow er Meter C4 + DC Pow er Supply V GG2 C1: 4700pF, C2: 1000pF, R1: suitable. Please refer the detail below. 4 ZL=50Ω ZG=50Ω C2 Spectrum Analyzer 5 + DC Pow er Supply V DD 1 RF Input added Gate Voltage 1(Pin & VGG1) C3, C4: 4700pF, 22uF in parallel 2 Gate Voltage 2(VGG2) VGG1=3.4V 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) EQUIVALENT CIRCUIT 3 4 1 5 2 NOTE: Resistance between Gate Voltage 1, where RF is input, and ground equals to 15k ohm. External resistance connected to VGG1; impedance between Pin&VGG1 and ground needs to make high impedance that doesn't prevent RF characteristic on this module. 25 Jun 2010 RA45H8994M1 6/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA45H8994M1 RECOMMENDATIONS and APPLICATION INFORMATION: Construction: This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal cap is attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: A thermal compound between module and heat sink is recommended for low thermal contact resistance. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 4.0 to 3.0 kgf-cm. Soldering and Defluxing: This module is designed for manual soldering. The leads must be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=45W, VDD=12.8V and Pin=50mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ ηT=33% VDD Stage (W) (W) (V) (°C/W) (A) 1st 0.05 3.0 3.5 0.62 12.8 2nd 3.0 45.0 0.6 9.96 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.8V x 0.62A – 3.0W + 0.05W) x 3.5°C/W = Tcase + 17.5 °C Tch2 = Tcase + (12.8V x 9.96A – 45.0W + 3.0W) x 0.6°C/W = Tcase + 51.3 °C For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient temperature Tair=60°C and Pout=45W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90°C - 60°C) / (45W/33% - 45W + 0.05W) = 0.33 °C/W When mounting the module with the thermal resistance of 0.33 °C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 47.5 °C Tch2 = Tair + 81.3 °C The 175°C maximum rating for the channel temperature ensures application under derated conditions. 25 Jun 2010 RA45H8994M1 7/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA45H8994M1 Output Power Control: Depending on linearity, the following three methods are recommended to control the output power: a) Non-linear FM modulation at high power operating: By the gate voltages (VGG1 and VGG2). When the gate voltages are close to zero, the nominal output signal (Pout=45W) is attenuated up to 60 dB and only a small leakage current flows from the battery into the drain. (On the following, V GG1 has to be kept in 3.4V.) Around VGG2=0V(minimum), the output power and drain current increases substantially. Around VGG2=4V (typical) to VGG2=5V (maximum), the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. (On the following, V GG1 has to be kept in 3.4V.) VGG2 is used to set the drain’s quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50Ω? c) Is the source impedance ZG=50Ω? ATTENTION: 1.High Temperature; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3.RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case temperature for RA series products lower than 60deg/C under standard conditions, and less than 90deg/C under extreme conditions. 5.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of operating into a severe high load VSWR approaching an open or short, an over load condition could occur. In the worst case there is risk for burn out of the transistors and burning of other parts including the substrate in the module. 6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is recommended that verification of no parasitic oscillation be performed at the completed equipment level also. 7.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. 25 Jun 2010 RA45H8994M1 8/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA45H8994M1 Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. - Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. - The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. - If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. - 25 Jun 2010 RA45H8994M1 9/9