25NDD Naina Semiconductor emiconductor Ltd. Diode – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward 0 current @ TJ = 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms 2 Maximum I t for fusing @ t = 10ms Symbol Values Units IF(AV) 25 A IF(RMS) 39 A IFSM 600 A 2 1.4 kA s 1 M1 PACKAGE It 2 Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature range Thermal resistance, junction to case Symbol Values TJ -65 to +125 Rth(JC) 1.0 Units 0 C 0 C/W Electrical Characteristics (TA = 25OC unless otherwise noted) Parameter Symbol Values Units Maximum average on-state current, 180 C sinusoidal IT(max) 25 A Maximum repetitive peak reverse voltage range VRRM 200 to 1600 V Forward voltage drop VFM 1.15 V RMS isolation voltage VISO 2500 V 0 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120 [email protected] • www.nainasemi.com Naina Semiconductor emiconductor Ltd. 25NDD ALL DIMENSIONS ARE IN MM Diode Configuration 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120 [email protected] • www.nainasemi.com