RoHS MTP100 RoHS SEMICONDUCTOR Nell High Power Products Glass Passivated Three-Phase Bridge Rectifier, 100A MTP10008 Thru MTP10018 80+2 66+2 50+2 14+0.3 16 39+0.3 14+0.3 6.5 14+0.5 14+0.3 6.5 36 5 SCREWS M5 3 26+1 18 22+1 18 All dimensions in millimeters FEATURES UL recognition file number E320098 Typical IR less than 2.0 µA High surge current capability Low thermal resistance Compliant to RoHS Isolation voltage up to 2500V TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for big power supply, field supply for DC motor, industrial automation applications. ADVANTAGE International standard package Epoxy meets UL 94 V-O flammability rating Small volume, light weight Small thermal resistance Weight: 195g (6.9 ozs) Page 1 of 3 PRIMARY CHARACTERRISTICS IF(AV) 100A V RRM 800V to 1800V I FSM 1200A IR 20 µA VF 1.3V T J max. 150ºC MTP100 SEMICONDUCTOR RoHS RoHS Nell High Power Products MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) MTP100 PARAMETER UNIT SYMBOL 08 10 12 16 18 Maximum repetitive peak reverse voltage V RRM 800 1000 1200 1600 1800 V Peak reverse non-repetitive voltage V RSM 900 1100 1300 1700 1900 V Maximum DC blocking voltage V DC 800 1000 1200 1600 1800 V Maximum average forward rectified output current I F(AV) 100 A I FSM 1200 A Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing I 2t 7200 A 2s RMS isolation voltage from case to leads V ISO 2500 V TJ -40 to 150 ºC T STG -40 to 125 ºC Peak forward surge current single sine-wave superimposed on rated load Operating junction storage temperature range Storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL VF Maximum instantaneous forward drop per diode I F = 100A Maximum reverse DC current at rated DC blocking T A = 25°C voltage per diod T A = 150°C MTP100 08 10 12 UNIT 16 18 1.3 V 20 IR µA 5000 THERMAL AND MECHANICAC (TA = 25°C unless otherwise noted) MTP100 TEST CONDITIONS PARAMETER UNIT SYMBOL 08 Typical thermal resistance junction to case Single-side heat dissipation, sine half wave Mounting torque ± 10 % A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. to heatsink M6 to terminals M5 R θJC (1) 10 12 0.20 Nm Notes (1) With heatsink, single side heat dissipation, half sine wave. (2) M6 screw. 16 3 - Module type: ”MTP” for 3Ø Brıdge 2 - I F(AV) rating: "100" for 100A 3 - Voltage code: code x 100 = VRRM 1 Page 2 of 3 °C/W 4 195 MTP 100 18 4 Approximate weight Device code 16 g MTP100 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Forward characteristic Forward voltage drop (V) Transient thermal impedance (°C/W) Fig.2 Thermal lmpedance (junction to case) Forward current (A) Time (s) Fig.4 Case temperature vs. output current Fig.3 Power dissipation vs. output current 140 Output Current (A) Power dissipation (W) 120 100 80 60 40 20 0 0 Output current (A) 20 40 60 80 100 120 Case Temperature (°C) Fig.6 I2t characteristic 2 3 2 I t (10 A S) Forward surge current (KA) Fig.5 Forward surge current vs. cycle Time (ms) Cycle @ 50Hz Page 3 of 3 140 160