RoHS MTP50M RoHS SEMICONDUCTOR Nell High Power Products Glass Passivated Three-Phase Bridge Rectifier, 50A MTP5008M Thru MTP5018M 38.0 5.0 (TYP.) 20.0±0.50 6.50 40.0 34.0 6.5 19.0±0.50 19.0±0.50 60.0 66.0 80.0 3.0 14.3 21.3 5-M5*12 Aluminum base plate All dimensions in millimeters FEATURES UL recognition file number E320098 Typical IR less than 2.0 µA Glass passivated chips High surge current capability Low thermal resistance Compliant to RoHS Isolation voltage up to 2500V Unique epoxy molding body with heatsink plate TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for big power supply, field supply for DC motor, industrial automation applications. PRIMARY CHARACTERRISTICS ADVANTAGE International standard package Epoxy meets UL 94 V-O flammability rating Small volume, light weight Small thermal resistance Weight: 110g (3.9 ozs) www.nellsemi.com Page 1 of 3 IF(AV) 50A V RRM 800V to 1800V I FSM 500A IR 5 µA VF 1.3V T J max. 150ºC RoHS MTP50M RoHS SEMICONDUCTOR Nell High Power Products MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) MTP50..M PARAMETER UNIT SYMBOL 08 10 12 16 18 Maximum repetitive peak reverse voltage V RRM 800 1000 1200 1600 1800 V Peak reverse non-repetitive voltage V RSM 900 1100 1300 1700 1900 V V DC 800 1000 1200 1600 1800 V Maximum DC blocking voltage Maximum average forward rectified output current Peak forward surge current single sine-wave superimposed on I F(AV) 50 A I FSM 500 A I 2t 1250 A 2s V ISO 2500 V TJ -40 to 150 ºC T STG -40 to 150 ºC rated load Rating (non-repetitive, for t greater than 1 ms and less than 10 ms) for fusing RMS isolation voltage from case to leads Operating junction storage temperature range Storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER MTP50..M TEST CONDITIONS SYMBOL I F = 50A VF Maximum instantaneous forward drop per diode Maximum reverse DC current at rated DC blocking 08 T A = 25°C voltage per diod 10 12 UNIT 16 18 1.3 V 5 IR T A = 150°C µA 3000 THERMAL AND MECHANICAL (TA = 25°C unless otherwise noted) MTP50..M TEST CONDITIONS PARAMETER Typical thermal resistance SYMBOL junction to case Single-side heat dissipation, sine half wave Mounting torque ± 10 % A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. to heatsink M6 to terminals M5 UNIT 08 10 R θJC (1) 0.20 (1) With heatsink, single side heat dissipation, half sine wave. (2) M6 screw. Ordering Information Tabel 1 50 16 M 2 3 4 1 - Module type: "MTP" for 3Φ Bridge 2 - lF(AV) rating : "50" for 50A 3 - Voltage code : code x 100 = V RRM 4 - Package type : "M" for Epoxy molded package Page 2 of 3 °C/W Nm Notes MTP 18 4 110 Device code 16 4 Approximate weight www.nellsemi.com 12 g RoHS MTP50M RoHS SEMICONDUCTOR Nell High Power Products Fig.1 Forward characteristic T ransient thermal impedance (°C/W) Fig.2 Thermal lmpedance (junction to case) Forward voltage drop (V) 3.5 T J = 25°C 3.0 2.5 2.0 1.5 1.0 0.5 10 100 1000 0.25 0.20 0.15 0.10 0.05 0 0.001 0.01 0.1 Forward current (A) 10 1 Time (s) Fig.4 Case temperature vs. on-state average current Fig.3 Power dissipation vs. output current 250 Output current (A) Power dissipation (W) 75 200 150 100 25 50 0 0 0 10 20 30 40 50 60 0 20 40 60 80 100 120 Output current (A) Case temperature (°C) Fig.5 Forward surge current vs cycle Fig.6 I 2 t characteristic 600 1.50 500 1.25 400 1.00 I 2 t ( KA 2 S ) Forward surge current (A) 50 300 0.50 100 0.25 1 10 0.00 100 Cycles @50Hz www.nellsemi.com 1 2 3 4 Time(ms) Page 3 of 3 160 0.75 200 0 140 5 6 7 8 9 10