RoHS GBJ10 Series RoHS SEMICONDUCTOR Nell High Power Products Glass Passivated Single-Phase Bridge Rectifier, 10A GBJ1004 Thru GBJ1012 30±0.3 .2± 0.2 4.6±0.1 + ~ 5±0.2 11.2±0.2 Ø3 20±0.3 3.6±0.1 ~ 2.2±0.2 2.7±0.1 1±0.1 60 0.65±0.05 7.5±0.2 °± 5° 0.5±0.1 0.5±0.1 10±0.2 17.5±0.2 4±0.2 2.5±0.2 7.5±0.2 All dimensions in millimeters FEATURES UL recognition file number E320098 Typical IR less than 2.0 µA High surge current capability Low thermal resistance Compliant to RoHS Isolation voltage up to 2500V + TYPICAL APPLICATIONS ~ ~ General purpose use in AC/DC bridge full wave rectification for big power supply, field supply for DC motor, industrial automation applications. ADVANTAGE PRIMARY CHARACTERRISTICS IF(AV) 10A V RRM 400V to 1200V I FSM 200A International standard package IR Epoxy meets UL 94 V-O flammability rating V F Small volume, light weight T J max. Small thermal resistance High heat-conduction rate Low temperature rise High temperature soldering guaranteed : 260°C/10 second, 2.3kg tension force Weight: 6.5g (0.23 ozs) www.nellsemi.com Page 1 of 3 5 µA 1.10V 150ºC RoHS GBJ10 Series RoHS SEMICONDUCTOR Nell High Power Products MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) GBJ10 PARAMETER UNIT SYMBOL 04 06 08 10 12 Maximum repetitive peak reverse voltage V RRM 400 600 800 1000 1200 V Peak reverse non-repetitive voltage V RSM 500 700 900 1100 1300 V Maximum DC blocking voltage V DC 400 600 800 1000 1200 V Maximum average forward rectified output current, T c = 85°C I F(AV) 10 A I FSM 200 A Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing I 2t 166 A 2s RMS isolation voltage from case to leads V ISO 2550 V TJ -40 to 150 ºC T STG -40 to 150 ºC Peak forward surge current single sine-wave superimposed on rated load Operating junction storage temperature range Storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) GBJ10 TEST CONDITIONS PARAMETER 04 I F = 5A Maximum instantaneous forward drop per diode Maximum reverse DC current at rated DC blocking 06 VF T A = 25°C voltage per diod UNIT SYMBOL 08 10 12 1.10 V 5 IR T A = 150°C µA 500 THERMAL AND MECHANICAC (TA = 25°C unless otherwise noted) GBJ10 TEST CONDITIONS PARAMETER UNIT SYMBOL 04 Typical thermal resistance junction to case Single-side heat dissipation, sine half wave Mounting torque ± 10 % A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. to heatsink M3 R θJC (1) Approximate weight Notes (1) With heatsink, single side heat dissipation, half sine wave. Device code GBJ 10 10 3 www.nellsemi.com 1 - Product type : “GBJ” Package,1Ø Bridge 2 - I F(AV) rating : "10" for 10A 3 - Voltage code : code x 100 = VRRM Page 2 of 3 06 08 10 12 1.0 °C/W 0.8 N.m 6.5 g RoHS GBJ10 Series RoHS SEMICONDUCTOR Nell High Power Products Fig.1 Derating curve for output rectified current Fig.2 Maximum non-repetitive peak forward surge current per bridge element 250 Average output current, amperes (A) Average forward output current, amperes (A) 12 10 8 6 4 200 150 100 50 8.3ms Single Half Sine-Wave JEDEC method 0 0 0 50 100 150 10 1 Number of cycles at 50H z Ambient temperature (°C) Fig.3 Typical reverse characteristics per bridge element Fig.4 Typical forward characteristics per bridge element 100 100 Instantaneous forward current, amperes (A) Instantaneous reverse output micro, amperes (μA) 100 10 TJ = 100 °C 1.0 0.1 TJ = 2 5°C 0.01 10 1.0 T J = 25°C 0.1 0 20 40 60 80 100 120 140 Percent of rated peak reverse voltage (%) www.nellsemi.com 0 0.2 0.6 1.0 Forward voltage (v) Page 3 of 3 1.4 1.8