MTP35W SEMICONDUCTOR RoHS RoHS Nell High Power Products Glass Passivated Triple-Phase Bridge Rectifier, 35A MTP3506W Thru MTP3516W 11.7 7 9.35 º º Ø8.5 Ø10.2 20 28.5 º Ø4.5 º º 7 28.5 Ø8.5 9.6 13.4 22 12.4 Ø2 27 FEATURES All dimensions in millimeters UL recognition file number E320098 Universal 3-way terminals: snap-on, wire wrap-around, or PCB mounting Typical IR less than 1.0 µA High surge current capability Low thermal resistance Solder dip 260°C, 40s Compliant to RoHS Glass passivated chips TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for big power supply, field supply for DC motor, industrial automation applications. MECHANICAL DATA PRIMARY CHARACTERRISTICS Case: GBPC Epoxy meets UL 94 V-O flammability rating Terminals: Gold plated on wire leads,solderable per J-STD-002 and JESD22-B102. Polarity: As marked Mounting Torque: 20 inches-lbs.max. Weight: 21g (0.74 ozs) Page 1 of 3 IF(AV) 35A V RRM 600V to 1600V I FSM 450A IR 5 µA VF 1.2V T J max. 150ºC MTP35W SEMICONDUCTOR RoHS RoHS Nell High Power Products MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) MTP35..W PARAMETER SYMBOL UNIT 06 08 10 12 16 Maximum repetitive peak reverse voltage V RRM 600 800 1000 1200 1600 V Maximum RMS voltage V RMS 420 560 700 840 1120 V Maximum DC blocking voltage V DC 600 800 1000 1200 1600 V Maximum average forward rectified output current (Fig.1) I F(AV) 35 A I FSM 450 A Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing I 2t 840 A 2s RMS isolation voltage from case to leads V ISO 2500 V T J ,T STG -55 to 150 ºC Peak forward surge current single sine-wave superimposed on rated load Operating junction storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) TEST CONDITIONS SYMBOL Maximum instantaneous forward drop per diode I F = 17.5A VF Maximum reverse DC current at rated DC blocking T A = 25°C voltage per diod T A = 150°C PARAMETER Typical junction capacitance per diode MTP35..W 06 08 10 12 UNIT 16 1.2 V 5 IR µA 1000 CJ 4V, 1MHz pF 300 THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) MTP35..W PARAMETER SYMBOL 06 R θJC (1) Typical thermal resistance 08 10 0.9 12 UNIT 16 °C/W Notes (1) With heatsink (2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #10 screw ORDERING INFORMATION TABLE Device code MTP 35 10 W 1 - Module type: 3 phase Bridge 2 - Current rating: IF (AV) 3 - Voltage code x 10: VRRM 4 - Package outline: W for “GBPC” package Page 2 of 3 MTP35W SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.2 Typical Forward Characteristics AVERAGE FORWARD CURRENT - IF (A) 50 Mounted on a 220x220x50mm Al plate heatsink 40 30 20 10 Resistive or Inductive load 0 0 50 100 150 INSTANTANEOUS FORWARD CURRENT - IF (A) Fig.1 Forward Current Derating Curve 50 40 30 20 10 0 0.6 CASE TEMPERATURE - TC( ℃) 1.0 1.2 1.4 1.6 400 300 200 100 0 100 NUMBER OF CYCLES AT 60 HZ Fig.4 Transient thermal impedance TRANSIENT THERMAL IMPEDANCE - Rthjc ( ℃ / W) PDAK FWD SURGE CURRENT - IFSM (A) 500 10 0.8 INSTANTANEOUS FORWARD VOLTAGE - V F (V) Fig.3 Max Non-Repetitive Peak Surge Current 1 max. typ. 1.0 Zth(j-C) 0.5 0 0.001 0.01 0.1 1.0 10 SQUARE WAVE PULSE DURATION (S) Page 3 of 3 100