NELLSEMI N-HFA30PA40C

RoHS
RoHS
N-HFA30PA40C
SEMICONDUCTOR
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 2 x 15 A
FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low I RRM
Very low Q rr
Specified at operating conditions
Designed and qualified for industrial level
TO-247 AB
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
common
cathode
2
DESCRIPTION
HFA30PA40C is a state of the art center tap ultrafast
recovery diode.
Employing the latest in epitaxial
construction and advanced processing techniques
it features a superb combination of characteristics
which result in performance which is unsurpassed by
any rectifier previously available. With basic ratings
of 400V and 15 A per leg continuous current, the
HFA30PA40C is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition
to ultrafast recovery time, the FRED product line
features extremely low values of peak recovery
current (I RRM ) and does not exhibit any tendency to
“snap-off” during the t b portion of recovery. The FRED
features combine to offer designers a rectifier with
lower noise and significantly lower switching losses
in both the diode and the switching transistor.
These FRED advantages can help to significantly
reduce snubbing, component count and heatsink
sizes. The FRED HFA30PA40C is ideally suited for
applications in power conversion systems (such as
inverters), motor drives, and many other similar
applications where high speed, high efficiency is
needed.
1
Anode
1
2
Common
cathode
3
Anode
2
PRODUCT SUMMARY
VR
400 V
VF at 15A at 25 °C
1.3 V
IF(AV)
2 x 15 A
trr (typical)
19 ns
TJ (maximum)
150 °C
Qrr (typical)
80 nC
dl(rec)M/dt (typical)
160 A/µs
lRRM (typical)
4.0 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
Maximum continuous forward current
TEST CONDITIONS
VR
per leg
per device
IF
VALUES
UNITS
400
V
15
Tc = 100 ºC
30
Single pulse forward current
l FSM
150
Maximum repetitive forward current
l FRM
60
Maximum power dissipation
Operating junction and storage temperature range
PD
T J , T Stg
Page 1 of 5
Tc = 25 ºC
75
Tc = 100 ºC
70
- 55 to + 150
A
W
ºC
N-HFA30PA40C
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
Cathode to anode
breakdown voltage
Maximum forward voltage
(TJ = 25 ºC unless otherwise specified)
SYMBOL
VBR
VFM
MIN.
TYP.
MAX.
400
-
-
IF = 15 A
-
1.3
1.5
IF = 30 A
-
1.6
-
IF = 15 A, TJ = 125 ºC
-
1.2
-
V R = V R rated
-
-
T J = 125°C, V R = V R rated
-
-
50
500
50
pF
-
nH
MAX.
UNITS
TEST CONDITIONS
IR = 100 µA
Maximum reverse
leakage current
IRM
Junction capacitance
CT
V R = 200V
-
25
Series inductance
LS
Measured lead to lead 5 mm from package body
-
12
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
PARAMETER
SYMBOL
Reverse recovery time
Peak recovery current
Reverse recovery charge
TEST CONDITIONS
MIN.
TYP.
-
28
35
IF = 1.0 A, dIF/dt = -100 A/µs, VR =30 V, TJ = 25°C
-
19
-
trr1
TJ = 25 ºC
-
35
60
trr2
TJ = 125 ºC
-
95
120
-
3
6.0
-
6
10
IRRM1
V
µA
(TJ = 25 ºC unless otherwise specified)
I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT)
trr
UNITS
IF= 15A
dIF/dt = -200 A/µs
VR = 266 V
TJ = 25 ºC
ns
IRRM2
TJ = 125 ºC
Qrr1
TJ = 25 ºC
-
60
180
Qrr2
TJ = 125 ºC
-
300
600
A
nC
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
Lead temperature
Junction to case,
single leg conduction
Junction to case,
both legs conducting
SYMBOL
Tlead
TEST CONDITIONS
0.063'' from case (1.6 mm) for 10 s
MIN.
TYP.
-
-
MAX.
300
-
-
1.40
-
-
0.70
UNITS
°C
RthJC
K/W
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
40
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
-
0.25
-
-
6.0
-
-
0.21
-
oz.
-
12
(10)
kgf . cm
(lbf . in)
Weight
6.0
(5.0)
Mounting torque
Marking device
Case style TO-247AB (JEDEC)
Page 2 of 5
HFA30PA40C
g
N-HFA30PA40C
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.9
1.20
1.00
0.7
0.80
0.5
Note:
0.60
PDM
Thermal impedance(°C/W), Z θJC
1.40
0.3
0.40
t1
t2
0.20
Duty Factor D =t 1 /t 2
0.1
Peak T J = PDM xZ θ JC +T C
SINGLE PULSE
0.05
0
10 -5
10 -4
10 -3
10 -2
10 -1
1.0
Rectangular pulse duration (seconds)
Fig.2 Forward current vs. forward voltage
Fig.3 Reverse recovery time vs. current rate of change
60
Reverse recovery time, t rr
(ns)
120
30A
100
40
(A)
Forward current, I F
50
T J =125°C
T R =266V
30
T J =125°C
20
T J =25°C
T J =150°C
T J =150°C
10
15A
80
7.5A
60
40
20
T J =-55°C
0
0
0
0.5
1.5
1
0
2.5
2
Anode-to-cathode voltage (V), V F
T J =125°C
T R =266V
30A
600
500
(nC)
600
800
1000
1200
Fig 5. Reverse recovery current vs. current rate of change
Reverse recovery current, I RRM
800
Reverse recovery charge, Q rr
400
15A
400
300
7.5A
200
25
T J =125°C
T R =266V
30A
20
15
(A)
Fig.4 Reverse recovery charge vs. current rate of change
700
200
Current rate of change(A/μs), -di F /dt
15A
10
7.5A
5
100
0
0
200
400
600
800
1000
0
0
1200
Current rate of change (A/μs), -di F /dt
200
400
600
800
1000
Current rate of change (A/μs), -di F /dt
Page 3 of 5
1200
N-HFA30PA40C
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig6. Dynamic parameters vs. junction temperature
Fig.7 Maximum average forward current vs. case temperature
40
1.4
1.2
trr
T J =175°C
30
1.0
IRRM
0.8
Duty cycle = 0.5
35
25
l F(AV) (A)
(Normalized to 1000A/µs)
Dynamic parameters, K f
Qrr
trr
0.6
20
15
0.4
10
Qrr
0.2
0.0
0
25
50
75
5
100
125
0
25
150
75
50
Junction temperature (°C),T J
100
125
Fig.8 Junction capacitance vs. reverse voltage
150
0.01Ω
(pF)
Junction capacitance, C J
VR = 200 V
L = 70 µH
100
D.U.T.
dIF /dt
adjust
50
D
IRFP250
G
S
0
10
100
175
Fig.9 Reverse recovery parameter test circuit
200
1
150
Case temperature (°C)
200
reverse voltage (V), V R
Fig.10 Reverse recovery waveform and definitions
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M /dt (5)
0.75 I
RRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
Page 4 of 5
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
t rrx l RRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
N-HFA30PA40C
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION TABLE
Device code
-
N
1
HFA
30
PA
40
C
2
3
4
5
6
1
-
Nell Semiconductors product
2
-
FRED family
3
-
Current rating (30 = 30 A, 15A x 2)
4
-
Package outline (PA = TO-247, 3 pins)
5
-
Voltage rating (40 = 400 V)
6
-
Configuration (C = Center tap common cathode)
Page 5 of 5