RoHS RoHS N-HFA30PA40C SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Specified at operating conditions Designed and qualified for industrial level TO-247 AB BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count common cathode 2 DESCRIPTION HFA30PA40C is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 400V and 15 A per leg continuous current, the HFA30PA40C is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the FRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to “snap-off” during the t b portion of recovery. The FRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These FRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The FRED HFA30PA40C is ideally suited for applications in power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. 1 Anode 1 2 Common cathode 3 Anode 2 PRODUCT SUMMARY VR 400 V VF at 15A at 25 °C 1.3 V IF(AV) 2 x 15 A trr (typical) 19 ns TJ (maximum) 150 °C Qrr (typical) 80 nC dl(rec)M/dt (typical) 160 A/µs lRRM (typical) 4.0 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Maximum continuous forward current TEST CONDITIONS VR per leg per device IF VALUES UNITS 400 V 15 Tc = 100 ºC 30 Single pulse forward current l FSM 150 Maximum repetitive forward current l FRM 60 Maximum power dissipation Operating junction and storage temperature range PD T J , T Stg Page 1 of 5 Tc = 25 ºC 75 Tc = 100 ºC 70 - 55 to + 150 A W ºC N-HFA30PA40C SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Cathode to anode breakdown voltage Maximum forward voltage (TJ = 25 ºC unless otherwise specified) SYMBOL VBR VFM MIN. TYP. MAX. 400 - - IF = 15 A - 1.3 1.5 IF = 30 A - 1.6 - IF = 15 A, TJ = 125 ºC - 1.2 - V R = V R rated - - T J = 125°C, V R = V R rated - - 50 500 50 pF - nH MAX. UNITS TEST CONDITIONS IR = 100 µA Maximum reverse leakage current IRM Junction capacitance CT V R = 200V - 25 Series inductance LS Measured lead to lead 5 mm from package body - 12 DYNAMIC RECOVERY CHARACTERISTICS PERLEG PARAMETER SYMBOL Reverse recovery time Peak recovery current Reverse recovery charge TEST CONDITIONS MIN. TYP. - 28 35 IF = 1.0 A, dIF/dt = -100 A/µs, VR =30 V, TJ = 25°C - 19 - trr1 TJ = 25 ºC - 35 60 trr2 TJ = 125 ºC - 95 120 - 3 6.0 - 6 10 IRRM1 V µA (TJ = 25 ºC unless otherwise specified) I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) trr UNITS IF= 15A dIF/dt = -200 A/µs VR = 266 V TJ = 25 ºC ns IRRM2 TJ = 125 ºC Qrr1 TJ = 25 ºC - 60 180 Qrr2 TJ = 125 ºC - 300 600 A nC THERMAL - MECHANICAL SPECIFICATIONS PER LEG PARAMETER Lead temperature Junction to case, single leg conduction Junction to case, both legs conducting SYMBOL Tlead TEST CONDITIONS 0.063'' from case (1.6 mm) for 10 s MIN. TYP. - - MAX. 300 - - 1.40 - - 0.70 UNITS °C RthJC K/W Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.25 - - 6.0 - - 0.21 - oz. - 12 (10) kgf . cm (lbf . in) Weight 6.0 (5.0) Mounting torque Marking device Case style TO-247AB (JEDEC) Page 2 of 5 HFA30PA40C g N-HFA30PA40C SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.9 1.20 1.00 0.7 0.80 0.5 Note: 0.60 PDM Thermal impedance(°C/W), Z θJC 1.40 0.3 0.40 t1 t2 0.20 Duty Factor D =t 1 /t 2 0.1 Peak T J = PDM xZ θ JC +T C SINGLE PULSE 0.05 0 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 Rectangular pulse duration (seconds) Fig.2 Forward current vs. forward voltage Fig.3 Reverse recovery time vs. current rate of change 60 Reverse recovery time, t rr (ns) 120 30A 100 40 (A) Forward current, I F 50 T J =125°C T R =266V 30 T J =125°C 20 T J =25°C T J =150°C T J =150°C 10 15A 80 7.5A 60 40 20 T J =-55°C 0 0 0 0.5 1.5 1 0 2.5 2 Anode-to-cathode voltage (V), V F T J =125°C T R =266V 30A 600 500 (nC) 600 800 1000 1200 Fig 5. Reverse recovery current vs. current rate of change Reverse recovery current, I RRM 800 Reverse recovery charge, Q rr 400 15A 400 300 7.5A 200 25 T J =125°C T R =266V 30A 20 15 (A) Fig.4 Reverse recovery charge vs. current rate of change 700 200 Current rate of change(A/μs), -di F /dt 15A 10 7.5A 5 100 0 0 200 400 600 800 1000 0 0 1200 Current rate of change (A/μs), -di F /dt 200 400 600 800 1000 Current rate of change (A/μs), -di F /dt Page 3 of 5 1200 N-HFA30PA40C SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig6. Dynamic parameters vs. junction temperature Fig.7 Maximum average forward current vs. case temperature 40 1.4 1.2 trr T J =175°C 30 1.0 IRRM 0.8 Duty cycle = 0.5 35 25 l F(AV) (A) (Normalized to 1000A/µs) Dynamic parameters, K f Qrr trr 0.6 20 15 0.4 10 Qrr 0.2 0.0 0 25 50 75 5 100 125 0 25 150 75 50 Junction temperature (°C),T J 100 125 Fig.8 Junction capacitance vs. reverse voltage 150 0.01Ω (pF) Junction capacitance, C J VR = 200 V L = 70 µH 100 D.U.T. dIF /dt adjust 50 D IRFP250 G S 0 10 100 175 Fig.9 Reverse recovery parameter test circuit 200 1 150 Case temperature (°C) 200 reverse voltage (V), V R Fig.10 Reverse recovery waveform and definitions (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M /dt (5) 0.75 I RRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. Page 4 of 5 (4) Qrr - area under curve defined by trr and IRRM Qrr = t rrx l RRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr N-HFA30PA40C SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION TABLE Device code - N 1 HFA 30 PA 40 C 2 3 4 5 6 1 - Nell Semiconductors product 2 - FRED family 3 - Current rating (30 = 30 A, 15A x 2) 4 - Package outline (PA = TO-247, 3 pins) 5 - Voltage rating (40 = 400 V) 6 - Configuration (C = Center tap common cathode) Page 5 of 5