RoHS RoHS HFA15TB120 SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode 15A/1200V Available RoHS* COMPLIANT FEATURES Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Specified at operating conditions Lead (Pb)-free Designed and qualified for industrial level Planar FRED Chip BENEFITS TO-220AC (Modified) Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count cathode 2 DESCRIPTION HFA15TB120 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200V and 15A continuous current, the HFA15TB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the FRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to “snap-off” during the t b portion of recovery. The FRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These FRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The FRED HFA15TB120 is ideally suited for applications in power supplies and conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. 1 Cathode 3 Anode h PRODUCT SUMMARY VR 1200 V VF at 16A at 25 ºC 2.3 V IF(AV) 15 A trr (typical) 33 ns TJ (maximum) 150 ºC Qrr (typical) 260 nC dI(rec)M/dt (typical) at 125 ºC 76 A/µS IRRM (typical) 5.8 A ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current SYMBOL IF Single pulse forward current I FSM Maximum repetitive forward current I FRM Maximum power dissipation Operating junction and storage temperature range www.nellsemi.com TEST CONDITIONS VR PD Tc = 100 ºC VALUES UNITS 1200 V 15 180 A 60 Tc = 25 ºC 151 Tc = 100 ºC 60 TJ, TStg - 55 to + 150 Page 1 of 6 W °C RoHS RoHS HFA15TB120 SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Cathode to anode breakdown voltage Maximum forward voltage (TJ = 25 ºC unless otherwise specified) SYMBOL VBR VFM TEST CONDITIONS MIN. TYP. MAX. 1200 - - IF = 15 A - 1.8 2.30 IF = 30 A - 2.7 3.2 IF = 15 A, TJ = 125 ºC - 1.8 2.3 V R = V R rated - 1.00 T J = 125°C, V R = V R rated - 375 20 2000 µA IR = 100 µA UNITS V Maximum reverse leakage current IRM Junction capacitance CT V R = 200V - 27 40 pF Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH UNITS DYNAMIC RECOVERY CHARACTERISTICS PERLEG PARAMETER SYMBOL MIN. TYP. MAX. I F = 0.5A, I R = 1.0A, I RR = 0.25A (RG#1 CKT) - 38 45 IF = 1.0 A, dIF/dt = 200 A/µs, VR =30 V, TJ = 25°C - 33 - trr1 TJ = 25 ºC - 90 135 trr2 TJ = 125 ºC - 164 245 IRRM1 TJ = 25 ºC - 5.8 10 - 8.3 15 - trr Reverse recovery time Peak recovery current Reverse recovery charge Peak rate of fall of recovery current during tb (TJ = 25 ºC unless otherwise specified) TEST CONDITIONS IF= 16A dIF/dt = 200 A/µs VR = 200 V ns IRRM2 TJ = 125 ºC Qrr1 TJ = 25 ºC 260 675 Qrr2 TJ = 125 ºC - 680 1838 dl(rec)M/dt1 TJ = 25 ºC - 120 - dl(rec)M/dt2 TJ = 125 ºC - 76 - A nC A/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS - - 300 ºC - - 0.83 Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Typical socket mount - - 80 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.50 - - 2.0 - g - 0.07 - 6.0 (5.0) - 12 (10) oz. kgf . cm (lbf . in) 0.063" from case (1.6 mm) for 10 s Weight Mounting torque Marking device www.nellsemi.com Case style TO-220AC Modified Page 2 of 6 HFA15TB120 K/W HFA15TB120 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.2 Typical reverse current vs. reverse voltage 100 1000 TJ = 150 °С Reverse current, l R (μA) lnstantaneous forward current,l F (A) Fig.1 Maximum forward voltage drop vs. lnstantaneous forward current 10 TJ = 150 °С TJ = 125 °С TJ = 25 °С 1 0.1 0 1 2 3 100 TJ = 125 °C 10 1 TJ = 25 ºC 0.1 0.01 0 4 200 Forward voltage drop, V FM (V) 400 600 800 Reverse voltage (V) Fig.3 Typical Junction Capacitance vs. Reverse Voltage Junction capacitance, C T (pF) 1000 100 TJ = 25 ºC 10 1 1 10 100 1000 10000 Reverse voltage, V R (V) Fig.4 Maximum thermal lmpedance Z thJC characteristics Thermal response, Z thJC 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 Single pulse (thermal response) 0.01 0.00001 0.0001 0.001 0.01 PDM t1 t2 Notes: 1. Duty factor D = t1 / t2 2. Peak TJ = PDM x ZthJC + Tc 0.1 1 Rectangular pulse duration, t 1 (sec) www.nellsemi.com 1000 Page 3 of 6 10 100 1200 HFA15TB120 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.5 Typical reverse recovery time vs. dl F /dt (Per Leg) Fig.6 Typical recovery current vs. dl F /dt (Per Leg) 270 30 V R = 200V T J = 125°C T J = 25°C 220 25 20 170 l rr (A) t rr (ns) l F = 16A l F = 8A V R = 200V T J = 125°C T J = 25°C l F = 16A l F = 8A 15 120 10 70 5 20 100 0 100 1000 dl F /dt (A/μs) dl F /dt (A/μs) Fig.7 Typical stored charge vs. dl F /dt Fig.8 Typical dl (rec)M /dt vs. dl F /dt 1600 1400 1000 10000 V R = 200V T J = 125°C T J = 25°C V R = 200V T J = 125°C T J = 25°C l F = 16A l F = 8A 1000 dl (rec)M /dt (A/μs) Q rr (nC) 1200 800 600 400 1000 l F = 16A l F = 8A 100 200 0 100 10 100 1000 dl F /dt (A/μs) www.nellsemi.com 1000 dl F /dt (A/μs) Page 4 of 6 HFA15TB120 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.9 Reverse Recovery Parameter Test Circuit VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig.10 Reverse Recovery Waveform and Definitions (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M /dt (5) 0.75 IRRM (1) dIF/dt (4) Q rr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 RRM I extrapolated to zero current. www.nellsemi.com Qrr = t rr x l RRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Page 5 of 6 HFA15TB120 SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION TABLE Device code HFA 15 TB 120 1 2 3 4 1 - FRED family 2 - Current rating (15 = 15 A) 3 - Package : TB = TO-220AC Modified 4 - Voltage rating (120 = 1200 V) TO-220AC Modified Package Outline 0.404 [10.26] 0.393 [9.98] Cathode 0.186 [4.72] 0.174 [4.42] 0.114 [2.90] 0.102 [2.59] 0.058 [1.47] 0.047 [1.19] Ø0.153 [3.89] Ø0.149 [3.78] 0.508 [12.90] 0.492 [12.50] 0.362 [9.19] 0.354 [8.99] 0.154 [3.91] 0.134 [3.40] 0.110 [2.79] 0.099 [2.51] 0.531 [13.49] 0.515 [13.08] 0.057 [1.45] 0.047 [1.19] Cathode Anode 0.018 [0.46] 0.014 [0.36] 0.100 [2.54] TYP 0.204 [5.18] 0.196 [4.98] www.nellsemi.com Page 6 of 6 0.034 [0.86] 0.030 [0.76]