N-D92-02 SEMICONDUCTOR RoHS RoHS Nell High Power Products FRED Ultrafast Soft Recovery Diode, 2 x 10 A FEATURES Ultrafast recovery Ultrasoft recovery Very low l RRM Very low Q rr Specified at operating conditions Designed and qualified for industrial level BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor. Higher frequency operation Reduced snubbing Reduced parts count TO-3PB common cathode 2 APPLICATIONS Switching mode power supplies UPS DC/DC converters Free wheeling diodes Inverters Motor drives 1 Anode 1 2 Common cathode 3 Anode 2 DESCRIPTION D92-02 is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 200V and 10 A per leg continuous current, the D92-02 is especially well suited for use as the companion diode for IGBTs and MOSFETs. The FRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These FRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. PRODUCT SUMMARY VR 200 V VF at 10A at 25 °C 0.95 V IF(AV) 2 x 10 A trr (typical) 35 ns TJ (maximum) 150 °C Qrr (typical) 25 nC lRRM (typical) 1.9 A ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Cathode to anode voltage Maximum continuous forward current TEST CONDITIONS VR per leg per device VALUES UNIT 200 V 10 IF 50Hz square wave duty = ½, T C =115°C 20 Single pulse forward current (Peak forward current per leg) l FSM 100 Maximum repetitive forward current (per leg) l FRM 40 T J , T Stg - 55 to + 150 Operating junction and storage temperature range www.nellsemi.com Page 1 of 5 A ºC N-D92-02 SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL SPECIFICATIONS (TJ = 25 ºC unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Maximum forward voltage SYMBOL VFM IRM Junction capacitance CT Series inductance LS UNIT MIN. TYP. MAX. 200 - - IF = 10 A - 0.9 0.95 IF = 20 A - 1 - IF = 10 A, TJ = 125 ºC - 0.8 - V R = V R rated - - 15 T J = 125°C, V R = V R rated - - 250 V R = 200V - 55 - pF Measured lead to lead 5 mm from package body - 8 - nH UNIT IR = 100 µA VBR Maximum reverse leakage current TEST CONDITIONS V µA DYNAMIC RECOVERY CHARACTERISTICS PERLEG(TJ = 25 ºC unless otherwise specified) PARAMETER SYMBOL t rr Reverse recovery charge MIN. TYP. MAX. I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) - 14 20 IF = 1.0 A, dIF/dt = 50 A/µs, VR =30 V, TJ = 25°C - - 30 t rr1 TJ = 25 ºC - 21 - t rr2 TJ = 125 ºC - 35 - - 1.9 - - 4.8 - Reverse recovery time Peak recovery current TEST CONDITIONS IF= 10A dIF/dt = -200 A/µs VR = 160 V ns l RRM1 TJ = 25 ºC l RRM2 TJ = 125 ºC Q rr1 TJ = 25 ºC - 25 - Q rr2 TJ = 125 ºC - 78 - MIN. TYP. MAX. UNITS - - 300 °C - - 1.5 - - 0.7 A nC THERMAL - MECHANICAL SPECIFICATIONS PER LEG PARAMETER Lead temperature Junction to case, single leg conduction Junction to case, both legs conducting SYMBOL Tlead TEST CONDITIONS 0.063 '' from case (1.6 mm) for 10 s RthJC K/W Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.25 - - 5.5 0.19 - g oz. 6 (5) - 12 (10) kgf . cm (lbf . in) Weight Mounting torque Marking device Case style TO-3PB (JEDEC) D92-02 ORDERING INFORMATION TABLE Device code N - D92 1 www.nellsemi.com 2 - 02 3 1 - Nell Semiconductors product 2 - FRED family, type = D92, current rating = 10A x 2, 3 - Voltage rating, 02 = 200V package outline = TO-3PB Page 2 of 5 RoHS RoHS N-D92-02 SEMICONDUCTOR Nell High Power Products Fig.2 Typical values of reverse current vs. reverse voltage 100 100 Reverse current, l R (μA) lnstantaneous forward current, I F (A) Fig.1 Maximum forward voltage drop characteristics 10 T J =150°C T J =125°C T J =25°C 1 T J =125° C 1 T J =100° C 0.1 T J =25 °C 0.01 0.001 0.1 0 0.4 0.8 1.6 1.2 2.0 0 50 100 150 200 250 Forward voltage drop, V FM (V) Reverse voltage, V R (V) Fig.3 Typical junction capacitance vs. reverse voltage Fig.4 Maximum allowable case temperature vs. average forward current Allowable case temperature ( ° C) 1000 Junction capacitance, C T (pF) T J =150°C 10 T J =25 °C 100 10 0 10 100 160 150 140 DC 130 Square wave (D = 0.50) Rated V R applied 120 110 See note (1) 100 0 1000 3 6 9 15 12 Average forward current, l F(AV) (A) Reverse voltage, V R (V) Thermal lmpedance, R th(j-c) (°C/W) Fig.5 Maximum thermal impedance R th(j-c) characteristics 10 1 P DM 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 t2 Notes: 1. Duty Factor D =t 1 /t 2. 2.Peak T J = PDM x R th(j-c) +T C 0.01 Rectangular pulse duration, t 1 (s) www.nellsemi.com Page 3 of 5 0.1 . 1 N-D92-02 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.7 Typical reverse recovery time vs. dl F /dt 15 50 12 40 RMS limit 9 t rr (ns) Average power loss (W) Fig.6 Forward power loss characteristics D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 6 3 3 6 9 12 20 l F = 20A l F = 10A l F = 5A V R = 160V 0 100 0 0 30 10 DC T J =125°C T J =25°C 15 1000 Average forward current, l F(AV) (A) dl F /dt(A/ µ s) Fig.9 Reverse recovery parameter test circuit Fig.8 Typical stored charge vs. dl F /dt Q rr (nC) 250 200 T J =125°C T J =25°C 150 l F = 20A l F = 10A l F = 5A V R =200V 0.01Ω L=70µH D.U.T. 100 dl F /dt adjust 50 V R = 160V 0 100 G IRFP250 S 1000 dl F /dt(A/ µ s) Note (1) Formula used:T C = T J - (Pd+Pd REV ) x R thJC ; Pd = Forward power loss = l F(AV) x V FM at (l F(AV) /D)(see fig.6); Pd REV = lnverse power loss = V R1 x l R (1-D); l R at V R1 = Rated V R www.nellsemi.com D Page 4 of 5 N-D92-02 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.10 Reverse recovery waveform and definitions (3) t rr IF ta tb 0 Q rr (2) l RRM (4) 0.5 l RRM dl (rec)M /dt (5) 0.75 l RRM (1) dl F /dt (1) dl F /dt - rate of change of current through zero crossing (4) Q rr - area under curve defined by t rr and l RRM (2) l RRM - peak reverse recovery current Qrr = t rr xl RRM 2 (3) t rr - reverse recovery time measured from zero crossing point of negative (5) dl (rec)M /dt - peak rate of change of current during t b portion of t rr going l F to point where a line passing through 0.75 l RRM and 0.50 l RRM extrapolated to zero current. 1.8 4.0 4.8±0.2 2.0±0.1 Φ3.2 ± 0,1 2 4.0 max 20.0 min 19.9±0.3 2.0 15.6±0.4 9.6 5.0 ±0 . 2 TO-3PB 3 5.45±0.1 +0.2 1.05 -0.1 +0.2 0.65 -0.1 5.45±0.1 1.4 common cathode 2 1 2 3 1 Anode 1 All dimensions in millimeters www.nellsemi.com Page 5 of 5 2 Common cathode 3 Anode 2