PEREGRINE PE4263

Product Specification
PE4263 DIE
SP6T UltraCMOS™ 2.6 V Switch
100 – 3000 MHz
Features
Figure 1. Functional Diagram
• Three pin CMOS logic control with
•
TX1
RX1
•
TX2
RX2
•
RX3
•
•
CMOS
Control/Driver
and ESD
RX4
•
integral decoder/driver
Low TX insertion loss: 0.55 dB at 900
MHz, 0.65 dB at 1900 MHz
TX – RX Isolation of 48 dB at 900 MHz,
40 dB at 1900 MHz
Low harmonics: 2fo = -85 dBc and
3fo = -72 dBc
1500 V HBM ESD tolerance all ports
41 dBm P1dB
No blocking capacitors required
Product Description
V2
V1
V3
The PE4263 SP6T RF UltraCMOS™ Switch
addresses the specific design needs of the
Quad-Band GSM Handset Antenna Switch
Module Market. On-chip CMOS decode logic
facilitates three-pin low voltage CMOS control.
High ESD tolerance of 1500 V at all ports, no
blocking capacitor requirements and on-chip
SAW filter over-voltage protection devices
make this the ultimate in integration and
ruggedness.
Figure 2. Die Top View
TX1
RX1
ANT
GND
RX2
GND
The PE4263 UltraCMOS™ RF Switch is
manufactured in Peregrine’s patented Ultra
Thin Silicon (UTSi®) CMOS process, offering
the performance of GaAs with the economy
and integration of conventional CMOS.
GND
GND
RX3
GND
RX4
TX2
GND
GND
GND
VDD
V3
GND
V2 V1
GND
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©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 4
PE4263
Product Specification
Table 1. Electrical Specifications @ +25 °C, VDD = 2.6 V (ZS = ZL = 50 Ω)
Parameter
Conditions
Typical
Operational Frequency
Units
MHz
Insertion Loss
Isolation
Return Loss
2nd Harmonic
3rd Harmonic
Switching Time
ANT - TX - 850 / 900 MHz
0.55
dB
ANT - TX - 1800 / 1900 MHz
0.65
dB
ANT - RX - 850 / 900 MHz
0.90
dB
ANT - RX - 1800 / 1900 MHz
1.00
dB
TX - RX - 850 / 900 MHz
48
dB
TX - RX - 1800 / 1900 MHz
40
dB
TX - TX - 850 / 900 MHz
29
dB
TX - TX - 1800 / 1900 MHz
25
dB
ANT - TX - 850 / 900 MHz
31
dB
ANT - TX - 1800 / 1900 MHz
25
dB
850 / 900 MHz
22
1800 / 1900 MHz
23
35 dBm TX Input - 850 / 900 MHz
-85
33 dBm TX Input - 1800 / 1900 MHz
-81
35 dBm TX Input - 850 / 900 MHz
-72
33 dBm TX Input - 1800 / 1900 MHz
-66
(10-90%) (90-10%) RF
dB
dBc
dBc
µs
2
Table 2. Pin Descriptions
Pin Name
12
ANT
RF Common – Antenna
22
TX1
RF I/O - TX1
31
GND
Ground (Requires two bond wires)
4
TX2
RF I/O – TX2
51
GND
Ground
1
6
GND
Ground
7
VDD
Supply
8
V3
Switch control input, CMOS logic level
91
GND
10
V2
Switch control input, CMOS logic level
11
V1
Switch control input, CMOS logic level
121
GND
Ground
131
GND
Ground
142
RX4
RF I/O – RX4
1
15
GND
Ground
162
RX3
RF I/O – RX3
171
TX1
GND
GND
2
1
20
3
Ground
RX1
RF I/O – RX1
15
GND
14
RX4
13
GND
7
8
9
10
11
12
GND
Ground
2
GND
RX3
V1
RF I/O – RX2
GND
6
17
16
V2
RX2
191
5
RX2
GND
18
PE4263
Die
4
GND
18
V3
Ground
TX2
GND
RX1
19
VDD
GND
2
20
Figure 3. Pin Configuration (Top View)
GND
2
Description
ANT
Pin No.
Notes: 1. Bond wires should be physically short and connected to ground plane
for best performance.
2. Blocking capacitors needed only when non-zero DC voltage present.
©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 4
Document No. 70-0175-02 │ UltraCMOS™ RFIC Solutions
NDA required for full version: contact [email protected]
PE4263
Product Specification
Table 3. Absolute Maximum Ratings
Symbol
VDD
Parameter/Conditions
Power supply voltage
Min
Table 4. DC Electrical Specifications
Max
Units
Parameter
Min
Typ
Max
Units
-0.3
4.0
V
2.4
2.6
2.8
V
V
VDD Supply Voltage
IDD Power Supply Current
13
20
µA
°C
Control Voltage High
°C
Control Voltage Low
0.3 x VDD
V
VI
Voltage on any input
-0.3
VDD+
0.3
TST
Storage temperature range
-65
+150
Operating temperature range
TOP
-40
TX input power (50 Ω)
1
+85
+38
PIN
dBm
RX input power (50 Ω)
1
ESD Voltage (HBM, MIL_STD
883 Method 3015.7)
VESD
ESD Voltage (MM, JEDEC,
JESD22-A114-B)
(VDD = 2.6V)
100
ESD Voltage (CDM, JEDEC,
JESD22-C101-A)
2000
ESD Voltage at ANT Port
(IEC 61000-4-2)
1700
V
V
V
V
Table 5. Truth Table
+23
1500
0.7 x VDD
Path
V3
V2
V1
ANT – RX1
0
0
0
ANT – RX2
0
0
1
ANT – RX3
0
1
0
ANT – RX4
0
1
1
ANT - TX1
1
0
x
ANT - TX2
1
1
x
V
Electrostatic Discharge (ESD) Precautions
Note: 1. Max RF specified with VDD applied
Absolute Maximum Ratings are those values
listed in the above table. Exceeding these values
may cause permanent device damage.
Functional operation should be restricted to the
limits in the DC Electrical Specifications table.
Exposure to absolute maximum ratings for
extended periods may affect device reliability.
When handling this UltraCMOS™ device, observe
the same precautions that you would use with other
ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the specified rating.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
Table 6. Ordering Information
Order Code
Die ID
Description
4263-92
C9797_3
PE4263-DIE-D
Film Frame
Wafer (Gross Die / Wafer Quantity)
4263-98
C9797_3
PE4263-DIE-400G
Waffle Pack
400 Dice / Waffle Pack
4263-10
C9797_3
PE4263-DIE-1H
Evaluation Kit
1/ box
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Package
Shipping Method
©2005 Peregrine Semiconductor Corp. All rights reserved.
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PE4263
Product Specification
Sales Offices
The Americas
North Asia Pacific
Peregrine Semiconductor Corp.
Peregrine Semiconductor K.K.
9450 Carroll Park Drive
San Diego, CA 92121
Tel 858-731-9400
Fax 858-731-9499
5A-5, 5F Imperial Tower
1-1-1 Uchisaiwaicho, Chiyoda-ku
Tokyo 100-0011 Japan
Tel: +81-3-3502-5211
Fax: +81-3-3502-5213
Europe
Peregrine Semiconductor Europe
Commercial Products:
Bâtiment Maine
13-15 rue des Quatre Vents
F- 92380 Garches, France
Tel: +33-1-47-41-91-73
Fax : +33-1-47-41-91-73
Space and Defense Products:
180 Rue Jean de Guiramand
13852 Aix-En-Provence cedex 3, France
Tel: +33(0) 4 4239 3361
Fax: +33(0) 4 4239 7227
South Asia Pacific
Peregrine Semiconductor
28G, Times Square,
No. 500 Zhangyang Road,
Shanghai, 200122, P.R. China
Tel: +86-21-5836-8276
Fax: +86-21-5836-7652
For a list of representatives in your area, please refer to our Web site at: www.psemi.com
Data Sheet Identification
Advance Information
The product is in a formative or design stage. The data
sheet contains design target specifications for product
development. Specifications and features may change in
any manner without notice.
Preliminary Specification
The data sheet contains preliminary data. Additional data
may be added at a later date. Peregrine reserves the right
to change specifications at any time without notice in order
to supply the best possible product.
Product Specification
The data sheet contains final data. In the event Peregrine
decides to change the specifications, Peregrine will notify
customers of the intended changes by issuing a DCN
(Document Change Notice).
©2005 Peregrine Semiconductor Corp. All rights reserved.
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The information in this data sheet is believed to be reliable.
However, Peregrine assumes no liability for the use of this
information. Use shall be entirely at the user’s own risk.
No patent rights or licenses to any circuits described in this
data sheet are implied or granted to any third party.
Peregrine’s products are not designed or intended for use in
devices or systems intended for surgical implant, or in other
applications intended to support or sustain life, or in any
application in which the failure of the Peregrine product could
create a situation in which personal injury or death might occur.
Peregrine assumes no liability for damages, including
consequential or incidental damages, arising out of the use of
its products in such applications.
The Peregrine name, logo, and UTSi are registered trademarks
and UltraCMOS is a trademark of Peregrine Semiconductor
Corp.
Document No. 70-0175-02 │ UltraCMOS™ RFIC Solutions
NDA required for full version: contact [email protected]