RUICHIPS RU30S4H

RU30S4H
P-Channel Advanced Power MOSFET
MOSFET
Features
Pin Description
• -30V/-4.8A,
RDS (ON) =50mΩ (Typ.) @ VGS=-10V
RDS (ON) =80mΩ (Typ.) @ VGS=-4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Available
SOP-8
Applications
• Power Management.
Absolute Maximum Ratings
Symbol
Dual P-Channel MOSFET
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
-30
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
°C
-55 to 150
°C
TA=25°C
-2.5
A
TA=25°C
-18
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
RθJA
②
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
①
TA=25°C
-4.8
TA=70°C
-3.8
TA=25°C
2
TA=70°C
1.3
A
A
W
62.5
°C/W
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RU30S4H
Electrical Characteristics
Symbol
(TA=25°C Unless Otherwise Noted)
Parameter
Test Condition
RU30S4H
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
③
VGS=0V, IDS=-250µA
V
-30
VDS=-30V, VGS=0V
-1
TJ=85°C
Gate Threshold Voltage
VDS=VGS, IDS=-250µA
Gate Leakage Current
VGS=±20V, VDS=0V
-30
-1
-1.8
µA
-2.5
V
±100
nA
VGS=-10V, IDS=-5A
50
60
mΩ
VGS=-4.5V, IDS=-3A
80
100
mΩ
-1
V
Drain-Source On-state Resistance
Diode Characteristics
VSD
③
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD=-1A, VGS=0V
ISD=-4A, dlSD/dt=100A/µs
15
ns
9
nC
1
Ω
④
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
490
85
pF
40
9
VDD=-15V, RL=3.75Ω,
IDS=-4A, VGEN=-10V,
RG=3Ω
Turn-off Fall Time
15
ns
27
11
④
Gate Charge Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
10
VDS=-24V, VGS=-10V,
IDS=-4A
1.9
nC
3.2
Pulse width limited by safe operating area.
②When mounted on 1 inch square copper board, t ≤10sec. The value in any given application depends on
the user's specific board design.
③Pulse test ; Pulse width≤300µs, duty cycle≤2%.
④Guaranteed by design, not subject to production testing.
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
2
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RU30S4H
Typical Characteristics
Drain Current
Ptot - Power (W)
-ID - Drain Current (A)
Power Dissipation
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
-ID - Drain Current (A)
Normalized Effective Transient
Thermal Transient Impedance
-VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
Square Wave Pulse Duration (sec)
3
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RU30S4H
Typical Characteristics
Drain-Source On Resistance
-ID - Drain Current (A)
RDS(ON) - On Resistance (mΩ)
Output Characteristics
-ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
RDS(ON) - On - Resistance (m)
Normalized Threshold Voltage
-VDS - Drain-Source Voltage (V)
-VGS - Gate-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
Tj - Junction Temperature (°C)
4
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RU30S4H
Typical Characteristics
Source-Drain Diode Forward
-IS - Source Current (A)
Normalized On Resistance
Drain-Source On Resistance
Tj - Junction Temperature (°C)
-VSD - Source-Drain Voltage (V)
Gate Charge
C - Capacitance (pF)
-VGS - Gate-Source Voltage (V)
Capacitance
-VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
QG - Gate Charge (nC)
5
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RU30S4H
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
6
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RU30S4H
Ordering and Marking Information
Device
Marking
Package
Packaging
Quantity
Reel Size
Tape width
RU30S4H
RU30S4H
SOP-8
Tape&Reel
2500
13’’
12mm
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
7
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RU30S4H
Package Information
SOP-8
SYMBOL
MM
INCH
MIN
MAX
MIN
MAX
MM
SYMBOL
INCH
MIN
MAX
MIN
MAX
A
1.350
1.750
0.053
0.069
E
3.800
4.000
0.150
0.157
A1
0.100
0.250
0.004
0.010
E1
5.800
6.200
0.228
0.244
A2
1.350
1.550
0.053
0.061
e
b
0.330
0.510
0.013
0.020
L
0.400
1.270
0.016
0.050
c
0.170
0.250
0.006
0.010
θ
0°
8°
0°
8°
D
4.700
5.100
0.185
0.200
1.270 (BSC)
0.050 (BSC)
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
8
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RU30S4H
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
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HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Copyright Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012
9
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