RU1HE3D N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 100V/3A, RDS (ON) =130mΩ (Typ.) @ VGS=10V RDS (ON) =140mΩ (Typ.) @ VGS=4.5V • ESD Protected • Reliable and Rugged SOT-223 • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Available Applications • Power Management N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 3 A TC=25°C 12 A TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJA ② Thermal Resistance-Junction to Ambient Copyright Ruichips Semiconductor Co., Ltd Rev. D – OCT., 2012 TC=25°C V ① TC=70°C 3 2.5 TC=25°C 2.5 TC=70°C 1.6 50 A W °C/W www.ruichips.com RU1HE3D Electrical Characteristics Symbol (TA=25°C Unless Otherwise Noted) Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) ③ Zero Gate Voltage Drain Current Test Condition VGS=0V, IDS=250µA RU1HE3D Min. Typ. 1 TJ=85°C VDS=VGS, IDS=250µA Gate Leakage Current VGS=±16V, VDS=0V 30 1.5 Unit V 100 VDS= 100V, VGS=0V Gate Threshold Voltage Max. 2 µA 2.7 V ±10 uA VGS= 10V, IDS=3A 130 145 mΩ VGS= 4.5V, IDS=2A 140 180 mΩ 1.2 V Drain-Source On-state Resistance Diode Characteristics VSD ③ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=2.5A, VGS=0V 43 ns 78 nC VGS=0V,VDS=0V,F=1MHz 0.6 Ω VGS=0V, VDS= 30V, Frequency=1.0MHz 930 ISD=2.5A, dlSD/dt=100A/µs Reverse Recovery Charge ④ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf pF 85 45 13 VDD=50V, RL=30Ω, IDS=3A, VGEN= 10V, RG=25Ω Turn-off Fall Time 15 ns 29 16 ④ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 20 VDS=50V, VGS= 10V, IDS=3A 5 26 nC 5.9 ①Current limited by maximum junction temperature. ②When mounted on 1 inch square copper board, t ≤10sec. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. D – OCT., 2012 2 www.ruichips.com RU1HE3D Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. D – OCT., 2012 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU1HE3D Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. D – OCT., 2012 Tj - Junction Temperature (°C) 4 www.ruichips.com RU1HE3D Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. D – OCT., 2012 QG - Gate Charge (nC) 5 www.ruichips.com RU1HE3D Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU1HE3D RU1HE3D SOT-223 Tape&Reel 2500 13’’ 12mm Copyright Ruichips Semiconductor Co., Ltd Rev. D – OCT., 2012 6 www.ruichips.com RU1HE3D Package Information SOT-223 SYMBOL MM INCH MM SYMBOL INCH MIN MAX MIN MAX MIN MAX MIN MAX A 1.520 1.800 0.060 0.071 E 3.300 3.700 0.130 0.146 A1 0.000 0.100 0.000 0.004 E1 6.830 7.070 0.269 0.278 A2 1.500 1.700 0.059 0.067 e b 0.660 0.820 0.026 0.032 e1 4.500 4.700 0.177 0.185 c 0.250 0.350 0.010 0.014 L 0.900 1.150 0.035 0.045 D 6.200 6.400 0.244 0.252 θ 0° 10° 0° 10° D1 2.900 3.100 0.114 0.122 2.300(BSC) 0.091(BSC) ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. D – OCT., 2012 7 www.ruichips.com RU1HE3D Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. D – OCT., 2012 8 www.ruichips.com