SANKEN 2SB1383_07

(2 k Ω) (80Ω) E
2SB1383
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2083)
–10max
µA
V
IEBO
VEB=–6V
–10max
mA
–120min
2000min
VCE(sat)
IC=–12A, IB=–24mA
–1.8max
VBE(sat)
IC=–12A, IB=–24mA
–2.5max
V
VCE=–12V, IE=1A
50typ
MHz
VCB=–10V, f=1MHz
230typ
pF
W
Tj
150
°C
fT
–55 to +150
°C
COB
Tstg
V
1.05 +0.2
-0.1
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
–24
2
–12
–10
5
–24
24
1.0typ
3.0typ
1.0typ
–1.0mA
–5
I B =–0.6mA
0
–1
–2
–3
–4
–5
–12A
–1
–6A
0
–0.5 –1
–6
–10
–100
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
Typ
5000
1000
500
–10
–40
12
5000
5˚C
25
Transient Thermal Resistance
10000
10000
DC Cur rent Gain h FE
20000
˚C
–30
˚C
1000
500
200
–0.2
–0.5
Collector Current I C (A)
–1
–5
–10
–40
)
0.1
1
10
1000
P c – T a Derating
120
M aximum Power Dissipa ti on P C (W)
Co lle ctor Cu rre nt I C (A)
nk
Collector-Emitter Voltage V C E (V)
–200
si
–100
at
–50
he
–10
ite
–5
fin
–0.2
–3
In
Without Heatsink
Natural Cooling
ith
–1
100
W
s
–5
–0.5
10
s
10
1m
20
DC
–10
m
30
10
40
5
100
–50
Typ
Emitter Current I E (A)
mp
0.5
Time t(ms)
50
1
Te
1
–100
0.5
–2.6
2
Safe Operating Area (Single Pulse)
60
–2
θ j-a – t Characteristics
(V C E =–12V)
0
0.1
–1
Collector Current I C (A)
f T – I E Characteristics (Typical)
Cut- off F req uency f T (MH Z )
DC Cur rent Gain h FE
20000
–5
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–1
0
–500
Base Current I B (mA)
h FE – I C Characteristics (Typical)
–0.5
–10
–5
Collector-Emitter Voltage V C E (V)
200
–0.2
–15
–30
–1.5mA
–2
–20
se
–2.5m A
I C =–25A
(V C E =–4V)
(Ca
–4 .0m A
0
–25
5˚C
Collector Current I C (A)
–20
–10
–3
12
–6 .0 m A
–15
I C – V BE Temperature Characteristics (Typical)
Collector Current I C (A)
.0
1.4
E
Weight : Approx 6.0g
a. Part No.
b. Lot No.
θ j- a ( ˚ C/W)
–8
mA
C
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
–25
0.65 +0.2
-0.1
5.45±0.1
B
VCC
(V)
I C – V CE Characteristics (Typical)
2
3
)
120(Tc=25°C)
ø3.2±0.1
b
emp
A
PC
a
p)
–2
em
IB
V
eT
hFE
2.0±0.1
Cas
V(BR)CEO
A
4.8±0.2
˚C (
V
–25(Pulse–40)
19.9±0.3
IC=–25mA
VCE=–4V, IC=–12A
–6
IC
VEBO
15.6±0.4
9.6
2.0
VCB=–120V
1.8
–120
ICBO
5.0±0.2
VCEO
Unit
eT
V
Ratings
Cas
–120
C
External Dimensions MT-100(TO3P)
(Ta=25°C)
Conditions
Symbol
C(
VCBO
■Electrical Characteristics
25˚
Unit
4.0
Ratings
Symbol
Equivalent circuit
4.0max
■Absolute maximum ratings (Ta=25°C)
B
Application : Chopper Regulator, DC Motor Driver and General Purpose
20.0min
Darlington
50
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
45