2SC3519/3519A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A) VCB= V IEBO 15 A V(BR)CEO µA 100max VEB=5V 160min IC=25mA 180min V 4 A hFE VCE=4V, IC=5A 50min∗ PC 130(Tc=25°C) W VCE(sat) IC=5A, IB=0.5A 2.0max V Tj 150 °C fT VCE=12V, IE=–2A 50typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 250typ pF RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 40 4 10 10 –5 1 –1 0.2typ 1.3typ 0.45typ 5 50mA I B =20mA 0 0 1 2 3 0 4 0 0.2 0.4 0.6 0.8 h FE – I C Temperature Characteristics (Typical) (V C E =4V) DC Cur rent Gain h FE DC Curr ent Gain h F E 300 100 Typ 50 5 Transient Thermal Resistance 300 1 125˚C 100 25˚C –30˚C 50 10 0.02 10 15 0.1 Collector Current I C (A) 0.5 1 5 10 15 0.5 0.1 100 Collector-Emitter Voltage V C E (V) 2 200 Co lle ctor Cu rre nt I C (A) nk 50 si 66 10 at Emitter Current I E (A) 0.05 5 he 1.2SC3519 2.2SC3519A ite Without Heatsink Natural Cooling 0.5 fin 1 100 In Cut-o ff F reque ncy f T (MH Z ) DC 5 ith M aximum Power Dissipa ti on P C (W) ms 1 –10 1000 2000 P c – T a Derating 0.1 –5 100 W 20 –1 10 130 10 –0.1 1 Time t(ms) 10 40 1.8 1 40 Typ 5.0±0.2 θ j-a – t Characteristics Safe Operating Area (Single Pulse) 80 2 3 (V C E =12V) 0 –0.02 1 Collector Current I C (A) f T – I E Characteristics (Typical) 60 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 0 1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 5 5A Collector-Emitter Voltage V C E (V) 10 0.02 p) I C =10A 1 10 em 10 0m A 2 eT A as 200m 10 (C mA C 300 (V C E =4V) 15 3 25 mA 5˚ 400 12 mA Collector Current I C (A) 500 1.4 E I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) A C Weight : Approx 6.0g a. Type No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) A 0m 70 Collector Current I C (A) m 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) 0 60 2 3 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) 15 ø3.2±0.1 1.05 +0.2 -0.1 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) I C – V CE Characteristics (Typical) a b IB Tstg 2.0±0.1 V ) 5 IC 180 mp VEBO 160 4.8±0.2 Te V 15.6±0.4 9.6 se 180 µA (Ca 160 ICBO ˚C VCEO Unit 100max –30 V External Dimensions MT-100(TO3P) ˚C 180 2SC3519A 2.0 160 2SC3519 Conditions 4.0 VCBO Symbol 19.9±0.3 Unit (Ta=25°C) 4.0max Symbol 2SC3519 2SC3519A Application : Audio and General Purpose ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) 20.0min LAPT 50 Without Heatsink 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150