(7 0 Ω ) E 2SB1649 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Ratings Unit ICBO VCB=–150V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V °C fT –55 to +150 °C COB Tstg IC=–10A, IB=–10mA –3.0max V VCE=–12V, IE=2A 45typ MHz VCB=–10V, f=1MHz 320typ pF 3.0 150 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –40 4 –10 –10 5 –10 10 0.7typ 1.6typ 1.1typ 0 –2 –4 –3 –15 I C =–1 0A I C =–5A –1 0 –0.2 –6 –0.5 –1 Collector-Emitter Voltage V C E (V) –10 10,000 5,000 –5 –10 –15 125˚C Transient Thermal Resistance Typ –1 p) 0 –1 25˚C –30˚C 10000 5000 1000 –0.2 –0.5 Collector Current I C (A) –1 –2 –5 –10 –15 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) –3 Base-Emittor Voltage V B E (V) (V C E =–4V) 50000 –0.5 0 –50 –100 –200 h FE – I C Temperature Characteristics (Typical) DC Curr ent Gain h F E DC Curr ent Gain h F E –5 (V C E =–4V) 1,000 –0.2 –5 Base Current I B (mA) h FE – I C Characteristics (Typical) 50,000 –10 Tem I C =–15A (V CE =–4V) se –2 θ j - a (˚C /W) 0 I C – V BE Temperature Characteristics (Typical) –30 –5 3.35 Weight : Approx 6.5g a. Part No. b. Lot No. E (Ca I B =–0.3mA C ˚C –0. 5m A 0.65 +0.2 -0.1 1.5 125 –0.8 mA –10 B Collector Current I C (A) A m –2 Collector Current I C (A) –1 .0m A 4.4 V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) –1.5mA –15 +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) –50mA –10mA –3mA 1.75 1.05 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) I C – V CE Characteristics (Typical) ø3.3±0.2 a b V mp) VBE(sat) Tj –2.5max eT e W IC=–10A, IB=–10mA 3.3 A 85(Tc=25°C) 5000min∗ Cas –1 PC –150min ˚C ( IB VCE(sat) IC=–30mA VCE=–4V, IC=–10A ) hFE emp V(BR)CEO A 3.45 ±0.2 seT V –15 5.5±0.2 (Ca –5 IC 15.6±0.2 25˚C VEBO 0.8±0.2 Conditions V 5.5 Unit –150 1.6 Ratings Symbol External Dimensions FM100(TO3PF) (Ta=25°C) 9.5±0.2 ■Electrical Characteristics VCBO Symbol C Application : Audio, Series Regulator and General Purpose 23.0±0.3 ■Absolute maximum ratings (Ta=25°C) Equivalent circuit 16.2 Darlington B Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 60 100 40 m s –5 ite he at si 40 20 –0.1 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 54 5 10 –0.05 –3 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 nk Without Heatsink Natural Cooling 60 fin –1 –0.5 80 In 20 DC s ith Collect or Cur re nt I C ( A) –10 10 0m W Cut- off F req uency f T (M H Z ) 10 Maxim um Power Dissipation P C (W) –50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150