2SC4886 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1860) A hFE µA 150min V VCE=4V, IC=5A 50min∗ 3 A VCE(sat) IC=5A, IB=500mA 2.0max V PC 80(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 200typ pF °C ∗hFE Rank –55 to +150 16.2 1.05 +0.2 -0.1 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 60 12 5 10 –5 0.5 –0.5 0.26typ 1.5typ 0.35typ I B =20mA 0 0 1 2 3 0 4 0 0.2 0.4 0.6 0.8 (V C E =4V) 200 Typ 50 5 100 25˚C –30˚C 50 20 0.02 10 14 Transient Thermal Resistance DC Cur rent Gain h FE 0.1 Collector Current I C (A) 0.5 1 5 0.5 0.1 1 10 80 1m Typ 10 10 5 40 at si nk Without Heatsink Natural Cooling he 0.5 ite 1 60 fin Co lle ctor Cu rre nt I C (A) s In 20 m s ith 40 DC 10 0m s W 60 20 0.1 0 –0.02 –0.1 –1 Emitter Current I E (A) 120 –10 0.05 2 1000 2000 P c – T a Derating 40 80 100 Time t(ms) Safe Operating Area (Single Pulse) (V C E =12V) Cut-o ff F requ ency f T (MH Z ) 10 14 1 Collector Current I C (A) f T – I E Characteristics (Typical) 2 3 M aximum Power Dissipa ti on P C (W) DC Curr ent Gain h F E 125˚C 1 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 200 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 1.0 Base Current I B (A) h FE – I C Characteristics (Typical) 20 0.02 p) I C =10A 5A Collector-Emitter Voltage V C E (V) 100 5 em 1 eT 50m A 5 10 as 10 0m A 2 (C A 5˚C 150m E (V C E =4V) 12 A θ j - a ( ˚ C/W) Collector Current I C (A) 200m 10 C Weight : Approx 6.5g a. Part No. b. Lot No. 14 Collector Current I C (A) A 300m 3.35 1.5 I C – V BE Temperature Characteristics (Typical) 3 Collector-Emitter Saturation Voltage V C E (s at) (V ) A 0m A 75 400m 4.4 B V CE ( sat ) – I B Characteristics (Typical) 0.65 +0.2 -0.1 5.45±0.1 1.5 RL (Ω) I C – V CE Characteristics (Typical) 0.8 2.15 5.45±0.1 VCC (V) A 0m 60 0mA 50 1.75 O(50 to 100), P(70 to 140), Y(90 to 180) ■Typical Switching Characteristics (Common Emitter) 14 ø3.3±0.2 a b 3.0 IB Tstg 0.8±0.2 14 100max 3.45 ±0.2 5.5 IC VEB=5V IC=25mA 5.5±0.2 1.6 V(BR)CEO 15.6±0.2 p) IEBO V µA Tem V 5 Unit 100max se 150 VEBO Ratings VCB=150V (Ca VCEO Conditions ˚C ICBO –30 V ˚C Unit 150 3.3 Symbol Ratings VCBO External Dimensions FM100(TO3PF) (Ta=25°C) 25 Symbol ■Electrical Characteristics 23.0±0.3 ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 9.5±0.2 LAPT Without Heatsink 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 150 3.5 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150