SANKEN 2SC4886_01

2SC4886
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1860)
A
hFE
µA
150min
V
VCE=4V, IC=5A
50min∗
3
A
VCE(sat)
IC=5A, IB=500mA
2.0max
V
PC
80(Tc=25°C)
W
fT
VCE=12V, IE=–2A
60typ
MHz
Tj
150
°C
COB
VCB=10V, f=1MHz
200typ
pF
°C
∗hFE Rank
–55 to +150
16.2
1.05 +0.2
-0.1
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
60
12
5
10
–5
0.5
–0.5
0.26typ
1.5typ
0.35typ
I B =20mA
0
0
1
2
3
0
4
0
0.2
0.4
0.6
0.8
(V C E =4V)
200
Typ
50
5
100
25˚C
–30˚C
50
20
0.02
10 14
Transient Thermal Resistance
DC Cur rent Gain h FE
0.1
Collector Current I C (A)
0.5
1
5
0.5
0.1
1
10
80
1m
Typ
10
10
5
40
at
si
nk
Without Heatsink
Natural Cooling
he
0.5
ite
1
60
fin
Co lle ctor Cu rre nt I C (A)
s
In
20
m
s
ith
40
DC
10
0m
s
W
60
20
0.1
0
–0.02
–0.1
–1
Emitter Current I E (A)
120
–10
0.05
2
1000 2000
P c – T a Derating
40
80
100
Time t(ms)
Safe Operating Area (Single Pulse)
(V C E =12V)
Cut-o ff F requ ency f T (MH Z )
10 14
1
Collector Current I C (A)
f T – I E Characteristics (Typical)
2
3
M aximum Power Dissipa ti on P C (W)
DC Curr ent Gain h F E
125˚C
1
1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
200
0.5
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.1
0
1.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
20
0.02
p)
I C =10A
5A
Collector-Emitter Voltage V C E (V)
100
5
em
1
eT
50m A
5
10
as
10 0m A
2
(C
A
5˚C
150m
E
(V C E =4V)
12
A
θ j - a ( ˚ C/W)
Collector Current I C (A)
200m
10
C
Weight : Approx 6.5g
a. Part No.
b. Lot No.
14
Collector Current I C (A)
A
300m
3.35
1.5
I C – V BE Temperature Characteristics (Typical)
3
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
0m
A
75
400m
4.4
B
V CE ( sat ) – I B Characteristics (Typical)
0.65 +0.2
-0.1
5.45±0.1
1.5
RL
(Ω)
I C – V CE Characteristics (Typical)
0.8
2.15
5.45±0.1
VCC
(V)
A
0m
60 0mA
50
1.75
O(50 to 100), P(70 to 140), Y(90 to 180)
■Typical Switching Characteristics (Common Emitter)
14
ø3.3±0.2
a
b
3.0
IB
Tstg
0.8±0.2
14
100max
3.45 ±0.2
5.5
IC
VEB=5V
IC=25mA
5.5±0.2
1.6
V(BR)CEO
15.6±0.2
p)
IEBO
V
µA
Tem
V
5
Unit
100max
se
150
VEBO
Ratings
VCB=150V
(Ca
VCEO
Conditions
˚C
ICBO
–30
V
˚C
Unit
150
3.3
Symbol
Ratings
VCBO
External Dimensions FM100(TO3PF)
(Ta=25°C)
25
Symbol
■Electrical Characteristics
23.0±0.3
■Absolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
9.5±0.2
LAPT
Without Heatsink
5
10
50
100
Collector-Emitter Voltage V C E (V)
200
150
3.5
0
0
25
50
75
100
Ambient Temperature Ta(˚C)
125
150