HYBRID GATE DRIVER IC FOR IGBT GH-039 SanRex Hybrid Gate Driver IC for IGBT High Voltage isolation by Photo Coupler Enable to drive IGBT up to dual 300A module Operate with single power source Support to high-density system design Built-in Photo Coupler input resistor 330 Built-in over current protection circuit with soft shutdown characteristic Output terminals on over current detection The model name is indicated on the back of the product. Maximum Ratings Symbol Item Min. Typ. Max. Unit VCC Supply Voltage 23.0 26.0 28.0 V VOH Forward Bias Output Voltage VCC 26.0V 15.4 17.5 18.0 V VCC 26.0V 07.0 08.0 10.0 V 05.0 07.0 V 10.0 11.5 mA VRB Reverse Bias Supply Voltage VFIN IF Photo Coupler Input Voltage Photo Coupler Input Current VFIN 5.0V g I1 Output Forward Current PW 2 s Dutycycle 0.05 04.0 06.0 A Ig2 Output Reverse Current PW 2 s Dutycycle 0.05 04.0 06.0 A tPLH tPHL tr tf Switching Time-High side VCC 26.0V IF 10mA 01.5 s Switching Time-Low side VCC 26.0V IF 10mA 01.5 s Rise Time VCC 26.0V IF 10mA 01.0 s Fall Time V 01.0 VOC Overcurrent trip level VCC 26.0V tOCP OCP delay time VCC 26.0V IF 10mA OCP rise and fall time VCC 26.0V IF 10mA tpcotf tALM IFO Alarm output delay time CC 09.0 26.0V I F 10mA 11.5 02.0 VCC 26.0V IF 10mA Fault output current dv/dt Common Mode Transient immunity Visc Topr Input Output Isolation Voltage Operational Ambient Temperature Tstg Storage Temperature Equivalent Circuit 69 Conditions Unless otherwise Tj 25 Ratings 5k AC50/60HZ 1minute 12.0 12.5 s V 04.0 10.0 s 05.0 s 01.0 05.0 10.0 17.0 10k AC3750 25 80 40 125 s mA V/ s V GH-039 Example of Application 1 2 To assure required voltage the capacitor >10 F has to be connected as close to the Driver IC as possible. 3 For the value of gate resistor the resistance value described in IGBT Module specification is recommended. The gate resistance should be determined at less than 6A of peak output current judging from signal delay time and surge voltage. 4 For D1 use a fast diode with same blocking voltage as IGBT. Required current capacity is 0.1 to 1.0A, reverse recovery time has to be less than 0.4 s. 5 6 To prevent malfunction of detection for over current protection, apply resistor and diode with value around 100 Definition of over current protection function 70