SavantIC Semiconductor Product Specification 2SA1741 Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Low collector saturation voltage APPLICATIONS ·For use as a driver in DC/DC converters and actuators PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -5 A ICM Collector current-Peak -10 A IB Base current -2.5 A PT Total power dissipation Ta=25 2.0 TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SA1741 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=-3A ;IB=-0.3A,L=1mH VCEsat-1 Collector-emitter saturation voltage IC=-3A; IB=-0.15A -0.3 V VCEsat-2 Collector-emitter saturation voltage IC=-4A; IB=-0.2A -0.5 V VBEsat-1 Base-emitter saturation voltage IC=-3A ;IB=-0.15A -1.2 V VBEsat-2 Base-emitter saturation voltage IC=-4A ;IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-60V ;IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 µA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 100 hFE-2 DC current gain IC=-1A ; VCE=-2V 100 hFE-3 DC current gain IC=-3A ; VCE=-2V 60 Transition frequency IC=-0.5A ; VCE=-10V 80 MHz Collector output capacitance f=1MHz;VCB=-10V 130 pF fT COB CONDITIONS MIN TYP. MAX -60 UNIT V 400 Switching times ton Turn-on time ts Storage time tf Fall time IC=-3.0A IB1=-IB2=-0.15A VCC=-30V ,RL=17C hFE-2 Classifications M L K 100-200 150-300 200-400 2 0.3 µs 1.5 µs 0.3 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 2SA1741 SavantIC Semiconductor Product Specification 2SA1741 Silicon PNP Power Transistors 4