SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB871 2SB871A DESCRIPTION ·With TO-220C package ·High speed switching ·Low collector saturation voltage APPLICATIONS ·For low voltage switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SB871 VCBO Collector-base voltage -20 Open base 2SB871A VEBO Emitter-base voltage V -50 2SB871 Collector-emitter voltage UNIT -40 Open emitter 2SB871A VCEO VALUE V -40 Open collector -5 V IC Collector current -10 A ICM Collector current-Peak -20 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -50~150 TC=25 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB871 2SB871A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SB871 MIN TYP. MAX UNIT -20 IC=-10mA; IB=0 V -40 2SB871A VCEsat Collector-emitter saturation voltage IC=-10A; IB=-0.33A -0.6 V VBEsat Base-emitter saturation voltage IC=-10A; IB=-0.33A -1.5 V -50 µA -50 µA ICBO Collector cut-off current 2SB871 VCB=-40V; IE=0 2SB871A VCB=-50V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-3A ; VCE=-2V 60 COB Output capacitance IE=0 ; VCB=-10V; f=1MHz 400 pF fT Transition frequency IC=-0.5A ; VCE=-10V 100 MHz 0.1 µs 0.5 µs 0.1 µs 260 Switching times ton Turn-on time tstg Storage time tf IC=-3A ; IB1=-IB2=-0.1A Fall time hFE-2 Classifications R Q P 60-120 90-180 130-260 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB871 2SB871A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3