SavantIC Semiconductor Product Specification 2SD1270 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Large collector current IC ·Complement to type 2SB945 APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Ta=25 SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 130 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 5 A ICM Collector current-peak 10 A PC Collector power dissipation TC=25 40 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1270 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.2A 0.5 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.2A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 50 µA hFE-1 DC current gain IC=0.1A ; VCE=2V 45 hFE-2 DC current gain IC=2A ; VCE=2V 60 Transition frequency IC=0.5A;VCE=10V;f=10MHz fT CONDITIONS MIN TYP. MAX 80 UNIT V 260 30 MHz 0.5 µs 1.5 µs 0.15 µs Switching times ton Turn-on time ts Storage time tf Fall time IC=2A ;IB1=0.2A ;IB2=-0.2A VCC=50V hFE-2 Classifications R Q P 60-120 90-180 130-260 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SD1270 SavantIC Semiconductor Product Specification 2SD1270 Silicon NPN Power Transistors 4