SavantIC Semiconductor Product Specification 2SC3692 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For use in drivers such as DC/DC Converters and actuators PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current-peak 14 A IB Base current 3.5 A PT Total power dissipation Ta=25 2.0 TC=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC3692 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=4A; IB=0.4A,L=1mH VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=0.2 A 0.3 V VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=0.3A 0.5 V VBEsat-1 Base-emitter saturation voltage IC=4A; IB=0.2 A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=6A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=60V; IE=0 10 µA ICEX Collector cut-off current VCE=60V; VBE=-1.5V Ta=125 10 1.0 µA mA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=0.7A ; VCE=2V 100 hFE-2 DC current gain IC=1.5A ; VCE=2V 100 hFE-3 DC current gain IC=4A ; VCE=2V 60 COB Output capacitance IE=0; VCB=10V;f=1MHz 100 pF fT Transition frequency IC=1A ; VCE=10V 150 MHz 60 UNIT V 200 400 Switching times ton Turn-on time ts Storage time tf Fall time IC=4A;RL=12.5C IB1=-IB2=0.2A VCCD50V hFE-2 classifications M L K 100-200 150-300 200-400 2 0.3 µs 1.5 µs 0.3 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SC3692