SAVANTIC 2SC3692

SavantIC Semiconductor
Product Specification
2SC3692
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·For use in drivers such as DC/DC
Converters and actuators
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
7
A
ICM
Collector current-peak
14
A
IB
Base current
3.5
A
PT
Total power dissipation
Ta=25
2.0
TC=25
30
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SC3692
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=4A; IB=0.4A,L=1mH
VCEsat-1
Collector-emitter saturation voltage
IC=4A; IB=0.2 A
0.3
V
VCEsat-2
Collector-emitter saturation voltage
IC=6A; IB=0.3A
0.5
V
VBEsat-1
Base-emitter saturation voltage
IC=4A; IB=0.2 A
1.2
V
VBEsat-2
Base-emitter saturation voltage
IC=6A; IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=60V; IE=0
10
µA
ICEX
Collector cut-off current
VCE=60V; VBE=-1.5V
Ta=125
10
1.0
µA
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE-1
DC current gain
IC=0.7A ; VCE=2V
100
hFE-2
DC current gain
IC=1.5A ; VCE=2V
100
hFE-3
DC current gain
IC=4A ; VCE=2V
60
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
100
pF
fT
Transition frequency
IC=1A ; VCE=10V
150
MHz
60
UNIT
V
200
400
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=4A;RL=12.5C
IB1=-IB2=0.2A
VCCD50V
hFE-2 classifications
M
L
K
100-200
150-300
200-400
2
0.3
µs
1.5
µs
0.3
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
2SC3692