SAVANTIC 2SD1212

SavantIC Semiconductor
Product Specification
2SD1212
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Large current capacity.
·Complement to type 2SB903
APPLICATIONS
·Suitable for relay drivers, high-speed
inverters,converters, and other general
large current switching applications.
·High-speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
30
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
12
A
ICM
Collector current-peak
20
A
PC
Collector power dissipation
1.75
W
TC=25
35
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD1212
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
60
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ;RBE=;
30
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
6
V
Collector-emitter saturation voltage
IC=5A, IB=0.25A
0.4
V
ICBO
Collector cut-offcurrent
VCB=40V;IE=0
0.1
mA
IEBO
Emitter cut-offcurrent
VEB=4V;IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=2V
70
hFE-2
DC current gain
IC=6A ; VCE=2V
30
Transition frequency
IC=1A ; VCE=5V
VCEsat
fT
280
120
MHz
0.20
µs
0.50
µs
0.03
µs
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=5A ;IB1=0.5A
IB2=-0.5A;
Fall time
hFE-1 classifications
Q
R
S
70-140
100-200
140-280
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
2SD1212
SavantIC Semiconductor
Product Specification
2SD1212
Silicon NPN Power Transistors
4