SavantIC Semiconductor Product Specification 2SB904 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SD1213 ·Low collector saturation voltage ·Large current capacity APPLICATIONS ·Large current switching of relay drivers, high-speed inverters,converters PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -20 A ICM Collector current-peak -30 A PC Collector power dissipation TC=25 60 Ta=25 2.5 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB904 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=: -30 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V Collector-emitter saturation voltage IC=-8A; IB=-0.4A ICBO Collector cut-off current IEBO VCEsat CONDITIONS MIN TYP. UNIT -0.5 V VCB=-40V; IE=0 -0.1 mA Emitter cut-off current VEB=-4V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 70 hFE-2 DC current gain IC=-10A ; VCE=-2V 30 Transition frequency IC=-1A ; VCE=-5V fT -0.25 MAX 280 120 MHz 0.3 µs 0.3 µs 0.02 µs Switching times ton Turn-on time tstg Storage time tf IC=-10A ;IB1=-IB2=-0.5A VCC=-10V;RL=1C Fall time hFE-1 Classifications Q R S 70-140 100-200 140-280 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SB904