SavantIC Semiconductor Product Specification 2SD1237L Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB921L ·Low collector saturation voltage ·Large current capacity. APPLICATIONS ·Suitable for relay drivers, high-speed inverters,converters, and other general large current switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 90 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 7 A ICM Collector current-peak 12 A PC Collector dissipation TC=25 40 W 1.75 Tj Junction temperature 150 Tstg Storage temperature -50~150 SavantIC Semiconductor Product Specification 2SD1237L Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE== 80 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 90 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V Collector-emitter saturation voltage IC=4A; IB=0.4A 0.4 V ICBO Collector cut-off current VCB=80V; IE=0 100 µA IEBO Emitter cut-off current VEB=4V; IC=0 100 µA hFE-1 DC current gain IC=1A ; VCE=2V 70 hFE-2 DC current gain IC=4A ; VCE=2V 30 Transition frequency IC=1A ; VCE=5V VCEsat fT CONDITIONS MIN TYP. MAX UNIT 280 20 MHz 0.1 µs 1.6 µs 0.4 µs Switching times ton Turn-on time ts Storage time tf Fall time IC=10IB1=-10IB2=2A hFE-1 Classifications Q R S 70-140 100-200 140-280 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 2SD1237L SavantIC Semiconductor Product Specification 2SD1237L Silicon NPN Power Transistors 4