SavantIC Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB595 ·High breakdown voltage :VCEO=100V ·Low collector saturation volage : VCE(sat)=2.0V(Max) APPLICATIONS ·Power amplifier applications ·Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A IE Emitter current -5 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 100 V V(BR)EBO Emitter-base breakdown votage IE=10mA; IC=0 5 V Collector-emitter saturation voltage IC=4A;IB=0.4 A 2.0 V VBE Base-emitter voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE-1 DC current gain IC=1A ; VCE=5V 40 hFE-2 DC current gain IC=4A ; VCE=5V 20 fT Transition frequency IC=1A ; VCE=5V 12 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 100 pF VCEsat CONDITIONS hFE-1 classifications R O Y 40-80 70-140 120-240 2 MIN TYP. MAX UNIT 240 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SD525