SAVANTIC 2SD2155

SavantIC Semiconductor
Product Specification
2SD2155
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PL package
·Complement to type 2SB1429
APPLICATIONS
·Power amplifier applications
·Recommend for 100W high fidelity audio
frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
180
V
VCEO
Collector-emitter voltage
Open base
180
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
15
A
IB
Base current
1.5
A
PC
Collector power dissipation
150
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD2155
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=8A ;IB=0.8A
2.0
V
VBE
Base-emitter voltage
IC=6A ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=180V; IE=0
5
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
5
µA
hFE-1
DC current gain
IC=1A ; VCE=5V
55
hFE-2
DC current gain
IC=6A ; VCE=5V
30
Transition frequency
IC=1A ; VCE=5V
10
MHz
Collector output capacitance
IC=0; f=1MHz;VCB=10V
160
pF
fT
COB
CONDITIONS
hFE-1 classifications
R
O
55-110
80-160
2
MIN
TYP.
MAX
180
UNIT
V
160
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
2SD2155
SavantIC Semiconductor
Product Specification
2SD2155
Silicon NPN Power Transistors
4