SavantIC Semiconductor Product Specification 2SD2155 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1429 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 180 V VCEO Collector-emitter voltage Open base 180 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A IB Base current 1.5 A PC Collector power dissipation 150 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD2155 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=8A ;IB=0.8A 2.0 V VBE Base-emitter voltage IC=6A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=180V; IE=0 5 µA IEBO Emitter cut-off current VEB=5V; IC=0 5 µA hFE-1 DC current gain IC=1A ; VCE=5V 55 hFE-2 DC current gain IC=6A ; VCE=5V 30 Transition frequency IC=1A ; VCE=5V 10 MHz Collector output capacitance IC=0; f=1MHz;VCB=10V 160 pF fT COB CONDITIONS hFE-1 classifications R O 55-110 80-160 2 MIN TYP. MAX 180 UNIT V 160 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 2SD2155 SavantIC Semiconductor Product Specification 2SD2155 Silicon NPN Power Transistors 4