SAVANTIC 2SD1148

SavantIC Semiconductor
Product Specification
2SD1148
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SB863
APPLICATIONS
·Power amplifier applications
·Recommend for 70W high fidelity audio
frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
140
V
VCEO
Collector-emitter voltage
Open base
140
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
10
A
IB
Base current
1
A
PT
Total power dissipation
100
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD1148
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)CEO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Base-emitter breakdown voltage
IC=50mA ,IB=0
Collector-emitter saturation voltage
IC=5A; IB=0.5A
2.0
V
VBE
Base-emitter voltage
IC=5A ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=140V; IE=0
5
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
5
µA
hFE-1
DC current gain
IC=1A ; VCE=5V
55
hFE-2
DC current gain
IC=5A ; VCE=5V
25
fT
Transition frequency
IC=1A ; VCE=10V
20
MHz
Cob
Output capacitance
IE=0 ; VCB=10V ;f=1MHz
200
pF
VCEsat
hFE-1 Classifications
R
O
55-110
80-160
2
140
UNIT
V
160
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SD1148