SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1624 2SC1625 DESCRIPTION ·With TO-220 package ·Complement to type 2SA814/815 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SC1624 VCBO Collector-base voltage 120 Open base 2SC1625 VEBO Emitter-base voltage V 100 2SC1624 Collector-emitter voltage UNIT 120 Open emitter 2SC1625 VCEO VALUE V 100 Open collector 5 V IC Collector current 1 A IE Emitter current -1 A PC Collector power dissipation 15 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1624 2SC1625 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SC1624 MIN TYP. MAX UNIT 120 V IC=10mA; IB=0 100 2SC1625 Emitter-base breakdown voltage IE=1mA ;IC=0 Collector-emitter saturation voltage IC=500mA; IB=50m A 0.5 V VBE Base-emitter on voltage IC=500mA ; VCE=5V 1.0 V ICBO Collector cut-off current VCB=50V;IE=0 1.0 µA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 µA hFE-1 DC current gain IC=150mA ; VCE=5V 70 hFE-2 DC current gain IC=500mA ; VCE=5V 40 COB Output capacitance IE=0; VCB=10V;f=1MHz 20 pF fT Transition frequency IC=150mA ; VCE=5V 30 MHz VCEsat hFE-1 Classifications O Y 70-140 120-240 2 5 V 240 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1624 2SC1625 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3