SAVANTIC 2SD526

SavantIC Semiconductor
Product Specification
2SD526
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type 2SB596
·Good linearity of hFE
APPLICATIONS
·Power amplifier applications
·Recommend for 20 25W high fidelity
audio frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
80
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
5
V
4
A
0.4
A
30
W
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD526
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=3 A;IB=0.3 A
1.5
V
VBE
Base-emitter voltage
IC=3A ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=80V ;IE=0
30
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
µA
hFE-1
DC current gain
IC=0.5A ; VCE=5V
40
hFE-2
DC current gain
IC=3A ; VCE=5V
15
fT
Transition frequency
IC=0.5A ; VCE=5V
8
MHz
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
90
pF
hFE-1 classifications
R
O
Y
40-80
70-140
120-240
2
MIN
TYP.
MAX
80
UNIT
V
240
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SD526
SavantIC Semiconductor
Product Specification
2SD526
Silicon NPN Power Transistors
4