SavantIC Semiconductor Product Specification 2SD718 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB688 APPLICATIONS ·Power amplifier applications ·Recommend for 45~50W audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V 8 A 0.8 A 80 W IC Collector current IB Base current PT Total power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD718 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER CONDITIONS MIN TYP. MAX Base-emitter breakdown voltage IC=50mA ,IB=0 Collector-emitter saturation voltage IC=5A; IB=0.5A 2.5 V VBE Base-emitter voltage IC=5A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE DC current gain IC=1A ; VCE=5V fT Transition frequency IC=1A ; VCE=5V 12 MHz Cob Output capacitance IE=0 ; VCB=10V ;f=1MHz 170 pF VCEsat hFE Classifications R O 55-110 80-160 2 120 UNIT V 55 160 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SD718 SavantIC Semiconductor Product Specification 2SD718 Silicon NPN Power Transistors 4