SAVANTIC 2SD718

SavantIC Semiconductor
Product Specification
2SD718
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SB688
APPLICATIONS
·Power amplifier applications
·Recommend for 45~50W audio frequency
amplifier output stage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
120
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
5
V
8
A
0.8
A
80
W
IC
Collector current
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD718
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
V(BR)CEO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Base-emitter breakdown voltage
IC=50mA ,IB=0
Collector-emitter saturation voltage
IC=5A; IB=0.5A
2.5
V
VBE
Base-emitter voltage
IC=5A ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=120V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=5V
12
MHz
Cob
Output capacitance
IE=0 ; VCB=10V ;f=1MHz
170
pF
VCEsat
hFE Classifications
R
O
55-110
80-160
2
120
UNIT
V
55
160
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SD718
SavantIC Semiconductor
Product Specification
2SD718
Silicon NPN Power Transistors
4