SavantIC Semiconductor Product Specification MJE3055T Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type MJE2955T ·DC current gain -hFE = 20–70 @ IC = 4 Adc ·Collector–emitter saturation voltage VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc APPLICATIONS ·Designed for general–purpose switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 70 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A IB Base current 6 A PC Collector power dissipation 75 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.67 UNIT /W SavantIC Semiconductor Product Specification MJE3055T Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCE(sat)-1 Collector-emitter saturation voltage IC=4A ;IB=0.4A 1.1 V VCE(sat)-2 Collector-emitter saturation voltage IC=10A ;IB=3.3A 8.0 V VBE Base-emitter on voltage IC=4A ; VCE=4V 1.8 V ICEO Collector cut-off current VCE=30V; IB=0 0.7 mA ICEX Collector cut-off current VCE=70V; VBE(off)=1.5V TC=150 1.0 5.0 mA ICBO Collector cut-off current VCB=70V; IE=0 TC=150 1.0 10 mA IEBO Emitter cut-off current VEB=5V; IC=0 5.0 mA hFE-1 DC current gain IC=4A ; VCE=4V 20 hFE-2 DC current gain IC=10A ; VCE=4V 5.0 Transition frequency IC=0.5A ; VCE=10V 2.0 fT 2 60 UNIT V 100 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3 MJE3055T SavantIC Semiconductor Product Specification MJE3055T Silicon NPN Power Transistors 4