SavantIC Semiconductor Product Specification 2N4904 2N4905 2N4906 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N4913/4914/4915 ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2N4904 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N4905 Open emitter -60 2N4906 -80 2N4904 -40 2N4905 Emitter-base voltage UNIT -40 Open base 2N4906 VEBO VALUE -60 V V -80 Open collector -5 V IC Collector current -5 A IB Base current -1 A PD Total power dissipation 87.5 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.0 UNIT /W SavantIC Semiconductor Product Specification 2N4904 2N4905 2N4906 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N4904 VCEO(SUS) Collector-emitter sustaining voltage 2N4905 MIN TYP. MAX UNIT -40 IC=-0.2A ;IB=0 V -60 -80 2N4906 VCE(sat)-1 Collector-emitter saturation voltage IC=-2.5A; IB=-0.25A -1.0 V VCE(sat)-2 Collector-emitter saturation voltage IC=-5A ;IB=-1A -1.5 V VBE(on) Base-emitter on voltage IC=-2.5A ; VCE=-2V -1.4 V ICEO Collector cut-off current VCE=Rated VCEO; IB=0 -1.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -0.1 mA ICEV Collector cut-off current VCE= Rated VCEO; VBE(off)=-1.5V TC=150 -0.1 -2.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA hFE-1 DC current gain IC=-2.5A ; VCE=-2V 25 hFE-2 DC current gain IC=-5A ; VCE=-2V 7 Transition frequency IC=-1A ; VCE=-10V;f=1.0MHz 4 fT 2 100 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N4904 2N4905 2N4906 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3