SavantIC Semiconductor Product Specification TIP29/29A/29B/29C Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type TIP30/30A/30B/30C APPLICATIONS ·For use in general purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP29 Collector-base voltage 60 Open emitter 80 TIP29C 100 TIP29 40 Collector-emitter voltage VEBO Emitter-base voltage IC V TIP29B TIP29A VCEO UNIT 40 TIP29A VCBO VALUE 60 Open base V TIP29B 80 TIP29C 100 Open collector 5 V Collector current (DC) 1 A ICM Collector current-Pulse 3 A IB Base current 0.4 A PC Collector power dissipation 30 w Tj Junction temperature -65~150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification TIP29/29A/29B/29C Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP29 VCEO(SUS) VCE(sat) VBE ICES ICEO Collector-emitter sustaining voltage MIN MAX UNIT 40 TIP29A 60 IC=30mA; IB=0 V TIP29B 80 TIP29C 100 Collector-emitter saturation voltage IC=1A; IB=0.125A 0.7 V Base-emitter on voltage IC=1A ; VCE=4V 1.3 V 0.2 mA 0.3 mA 1.0 mA Collector cut-off current Collector cut-off current TIP29 VCE=40V; VEB=0 TIP29A VCE=60V; VEB=0 TIP29B VCE=80V; VEB=0 TIP29C VCE=100V; VEB=0 TIP29/29A VCE=30V; IB=0 TIP29B/29C VCE=60V; IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.2A ; VCE=4V 40 hFE-2 DC current gain IC=1A ; VCE=4V 15 Transition frequency IC=0.2A ; VCE=10V;f=1MHz 3 fT TYP. 75 MHz THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.167 2 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors TIP29/29A/29B/29C PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3