SAVANTIC MJF13007

SavantIC Semiconductor
Product Specification
MJF13007
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·High voltage ,high speed
APPLICATIONS
·Particularly suited for 115V and 220V
switchmode applications such as switching
regulators,inverters ,motor controls,solenoid/
relay drivers and deflection circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
700
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
9
V
IC
Collector current (DC)
8
A
ICM
Collector current-Peak
16
A
IB
Base current
4
A
IBM
Base current-Peak
8
A
IE
Emitter current
12
A
IEM
Emitter current-Peak
24
A
PD
Total power dissipation
40
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance from junction to case
VALUE
3.12
UNIT
/W
SavantIC Semiconductor
Product Specification
MJF13007
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=10mA; IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=2A; IB=0.4A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=5A ;IB=1.0A
TC=100
2.0
3.0
V
VCEsat-3
Collector-emitter saturation voltage
IC=8A ;IB=2.0A
3.0
V
VBEsat-1
Base-emitter saturation voltage
IC=2A ;IB=0.4A
1.2
V
VBEsat-2
Base-emitter saturation voltage
IC=5A ;IB=1.0A
TC=100
1.6
1.5
V
ICBO
Collector cut-off current
VCB=700V; IE=0
TC=125
0.1
1.0
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
0.1
mA
hFE-1
DC current gain
IC=2A ; VCE=5V
8
40
hFE-2
DC current gain
IC=5A ; VCE=5V
5
30
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
4
Collector outoput capacitance
IE=0; f=0.1MHz ; VCB=10V
fT
COB
CONDITIONS
MIN
TYP.
MAX
400
UNIT
V
MHz
80
pF
Switching times resistive load
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
VCC=125V ,IC=5A
IB1=-IB2=1.0A
tp=25µs
duty cycleC1%
2
0.1
µs
1.5
µs
3.0
µs
0.7
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
MJF13007
SavantIC Semiconductor
Product Specification
MJF13007
Silicon NPN Power Transistors
4
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
5
MJF13007