SavantIC Semiconductor Product Specification MJ16018 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Switching Regulators ·Inverters ·Solenoids ·Relay Drivers ·Motor Controls ·Deflection Circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1400 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 10 A ICM Collector current-Peak 15 A IB Base current 8 A IBM Base current-Peak 12 A PD Total power dissipation 175 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 TC=100 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification MJ16018 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=50mA; IB=0 VCE(sat)-1 Collector-emitter saturation voltage IC=5A ;IB=2A TC=110 1.0 1.5 V VCE(sat)-2 Collector-emitter saturation voltage IC=10A ;IB=5A 5.0 V Base-emitter saturation voltage IC=5A ;IB=2A TC=110 1.5 1.5 V ICEV Collector cut-off current VCEV=1400V,VBE(off)=1.5Vdc TC=100 0.25 1.50 mA ICER Collector cut-off current VCE=1400V; RBE=50> TC=100 2.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=5V COB Collector outoput capacitance f=1kHz ; VCB=10V 450 pF 0.085 0.2 µs 0.90 2.0 µs 4.5 9.0 µs 0.2 0.4 µs VBE(sat) CONDITIONS MIN TYP. MAX 800 UNIT V 4 Switching times resistive load td Delay time tr Rise time ts Storage time tf Fall time IC=5A; IB1= IB2=2.0A VCC=250V ,RB2=3> PW=25µs Duty CycleC2% 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 MJ16018