SavantIC Semiconductor Product Specification MJ16012 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Switching Regulators ·Inverters ·Solenoids ·Relay Drivers ·Motor Controls ·Deflection Circuits PINNING (see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 850 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 15 A ICM Collector current-peak 20 A IB Base current 10 A IBM Base current-peak 15 A PD Total Power Dissipation Derate above 25 175 1.0 W W/ Ti Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification MJ16012 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCE(sat)-1 Collector-emitter saturation voltage IC=5A; IB=0.5A 2.5 V VCE(sat)-2 Collector-emitter saturation voltage IC=10A ;IB=1.0A TC=100 3.0 3.0 V Base-emitter saturation voltage IC=10A ;IB=1.0A TC=100 1.5 1.5 V ICER Collector cut-off current VCE=850V;RBE=50>;TC=100 2.5 mA ICEV Collector cut-off current VCE=850V; VBE(off)=1.5V TC=100 0.25 1.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 10 mA hFE DC current gain IC=15A ; VCE=5V COB Output capacitance VCB=10V,IE=0;f=1.0KHz 400 pF VBE(sat) CONDITIONS MIN TYP. MAX 450 UNIT V 7 Switching times resistive load td Delay time tr Rise time ts Storage time tf Fall time IC=10A ; VCC=250V IB1=1.0A ;IB2=2.0A PW=30µs; RB2=1.6> Duty CycleD2.0% 2 20 ns 200 ns 900 ns 150 ns SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3 MJ16012