Inchange Semiconductor Product Specification MJ16018 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS ・Switching Regulators ・Inverters ・Solenoids ・Relay Drivers ・Motor Controls ・Deflection Circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 10 A ICM Collector current-Peak 15 A IB Base current 8 A IBM Base current-Peak 12 A PD Total power dissipation 175 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VALUE UNIT 1.0 ℃/W TC=25℃ TC=100℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification MJ16018 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=50mA; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=5A ;IB=2A TC=110℃ 1.0 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=5A 5.0 V Base-emitter saturation voltage IC=5A ;IB=2A TC=110℃ 1.5 1.5 V ICEV Collector cut-off current VCEV=1500V,VBE(off)=1.5Vdc TC=100℃ 0.25 1.50 mA ICER Collector cut-off current VCE=1500V; RBE=50Ω TC=100℃ 2.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=5V COB Collector outoput capacitance f=1kHz ; VCB=10V 450 pF 0.085 0.2 μs 0.90 2.0 μs 4.5 9.0 μs 0.2 0.4 μs VBEsat CONDITIONS MIN TYP. MAX 800 UNIT V 4 Switching times resistive load td Delay time tr Rise time ts Storage time tf Fall time IC=5A; IB1= IB2=2.0A VCC=250V ,RB2=3Ω PW=25μs Duty Cycle≤2% 2 Inchange Semiconductor Product Specification MJ16018 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3