ISC MJ16018

Inchange Semiconductor
Product Specification
MJ16018
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3 package
・High voltage ,high speed
APPLICATIONS
・Switching Regulators
・Inverters
・Solenoids
・Relay Drivers
・Motor Controls
・Deflection Circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
10
A
ICM
Collector current-Peak
15
A
IB
Base current
8
A
IBM
Base current-Peak
12
A
PD
Total power dissipation
175
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
VALUE
UNIT
1.0
℃/W
TC=25℃
TC=100℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
MJ16018
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=50mA; IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=5A ;IB=2A
TC=110℃
1.0
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A ;IB=5A
5.0
V
Base-emitter saturation voltage
IC=5A ;IB=2A
TC=110℃
1.5
1.5
V
ICEV
Collector cut-off current
VCEV=1500V,VBE(off)=1.5Vdc
TC=100℃
0.25
1.50
mA
ICER
Collector cut-off current
VCE=1500V; RBE=50Ω
TC=100℃
2.5
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
DC current gain
IC=5A ; VCE=5V
COB
Collector outoput capacitance
f=1kHz ; VCB=10V
450
pF
0.085
0.2
μs
0.90
2.0
μs
4.5
9.0
μs
0.2
0.4
μs
VBEsat
CONDITIONS
MIN
TYP.
MAX
800
UNIT
V
4
Switching times resistive load
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
IC=5A; IB1= IB2=2.0A
VCC=250V ,RB2=3Ω
PW=25μs
Duty Cycle≤2%
2
Inchange Semiconductor
Product Specification
MJ16018
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3