2N3906 -0.2A, -40V PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM: 625mW (Ta=25°C) Collector Current ICM: -200mA Collector – Base Voltage V(BR)CBO: -40V G H 1Emitter 2Base 3Collector J A CLASSIFICATION OF hFE(1) D REF. B Product-Rank 2N3906-O 2N3906-Y 2N3906-G Range 100~200 200~300 300~400 A B C D E F G H J K K E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector 3 2 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector - Base Voltage VCBO -40 V Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 V IC -0.2 A PC 625 mW TJ, TSTG +150, -55 ~ +150 °C Collector Current -Continuous Cpllector Power Dissipation Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified) Symbol Min. Typ. Max. Unit Collector-Base Breakdown Voltage Parameter V(BR)CBO -40 - - V Collector-Emitter Breakdown Voltage V(BR)CEO -40 - - V IC=-1mA, IB=0 Emitter - Base Breakdown Voltage V(BR)EBO -5 - - V IE=-100µA, IC=0 Collector Cut-Off Current ICBO - - -0.1 Collector Cut-Off Current ICEX µA nA µA Emitter Cut-Off Current -50 Test Conditions IC=-10µA, IE=0 VCB=-40V, IE=0 VCE=-30V, VBE(off)=-3V IEBO - - -0.1 hFE(1) 100 - 400 hFE(2) 60 - - Collector-Emitter Saturation Voltage VCE(sat) - - -0.4 V IC=-50mA, IB=-5mA Base-Emitter Saturation Voltage VBE(sat) - - -0.95 V IC=-50mA, IB=-5mA fT 250 - - MHz DC Current Gain Transition Frequency http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev.B VEB =-5V, IC=0 VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-20V, IC=-10mA, f=100MHz Any changes of specification will not be informed individually. Page 1 of 3 2N3906 Elektronische Bauelemente -0.2A, -40V PNP General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev.B Any changes of specification will not be informed individually. Page 2 of 3 2N3906 Elektronische Bauelemente http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev.B -0.2A, -40V PNP General Purpose Transistor Any changes of specification will not be informed individually. Page 3 of 3