SECOS 2SC2216

2SC2216
0.05 A , 50 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES

Amplifier dissipation NPN Silicon
G
H
Base
Emitter
Collector
J
A
D
A
B
C
D
E
F
G
H
J
K
K
E
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
2.42
2.66
0.36
0.76
REF.
B
C
F
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
50
V
Collector to Emitter Voltage
VCEO
45
V
Emitter to Base Voltage
VEBO
4
V
Collector Current - Continuous
IC
50
mA
Collector Power Dissipation
PC
300
mW
TJ, TSTG
125, -55~125
°C
Junction, Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
50
-
-
V
IC=100μA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
45
-
-
V
IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
4
-
-
V
IE=100μA, IC=0
Collector Cut – Off Current
ICBO
-
-
0.1
μA
VCB=50V, IE=0
Emitter Cut – Off Current
IEBO
-
-
0.1
μA
DC Current Gain
hFE
40
-
140
VEB=3V, IC=0
VCE=12.5V, IC=12.5mA
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
0.2
V
IC=15mA, IB=1.5mA
Base to Emitter voltage
VBE(sat)
-
-
1.5
V
IC=15mA, IB=1.5mA
fT
300
-
-
MHz
Cob
-
-
2
pF
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
17-Feb-2011 Rev. A
VCE=12.5V, IC=12.5mA
VCB=10V, IE=0, f=30MHz
Any changes of specification will not be informed individually.
Page 1 of 2
2SC2216
Elektronische Bauelemente
0.05 A , 50 V
NPN Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
17-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2