D882S NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H J A CLASSIFICATION OF hFE REF. D A B C D E F G H J K B K Rank Range R 0 Y GR 60-120 100-200 160-320 200-400 E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Emitter Collector Base ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) SYMBOL RATING UNIT Collector to Base Voltage PARAMETER VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage V VEBO 6 Collector Current - Continuous IC 3 A Collector Power Dissipation PC 625 mW TJ, TSTG 150, -55~150 °C Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Collector to Base Breakdown Voltage V(BR)CBO 40 - - V IC=100 μA, IE = 0 A Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=10 mA, IB = 0 A Emitter to Base Breakdown Voltage V(BR)EBO 6 - - V IE=100 μA, IC = 0A Collector Cut-Off Current ICBO - - 1 μA VCB=40 V, IE = 0 A Collector Cut-Off Current ICEO - - 10 μA VCE=30 V, IB = 0 A Emitter Cut-Off Current IEBO - - 1 μA VEB=6 V, IC =0 A DC Current Gain hFE 60 - 400 VCE=2 V, IC=1 A Collector to Emitter Saturation Voltage VCE(sat) - - 0.5 V IC=2 A, IB=0.2 A Base to Emitter Saturation Voltage VBE(sat) - - 1.5 V IC=2 A, IB=0.2 A fT 50 - - MHz Transition Frequency http://www.SeCoSGmbH.com/ 08-Oct-2010 Rev. A VCE = 5 V, IC = 0.1 A, f=10 MHz Any changes of specification will not be informed individually. Page 1 of 2 D882S Elektronische Bauelemente NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 08-Oct-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 2