2SC2001 0.7 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High hFE and low VCE(sat) hFE(IC=100mA)：200(Typ) VCE(sat)(700mA)：0.2V(Typ) G H Emitter Collector Base J A CLASSIFICATION OF hFE Product-Rank 2SC2001-M 2SC2001-L 2SC2001-K Range 90~180 135~270 200~400 D B REF. C A B C D E F G H J K K E F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 0.7 A Collector Power Dissipation PC 0.6 W TJ, TSTG 150, -55~150 °C Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage V(BR)CBO 30 - - V IC=100μA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 25 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=100μA, IC=0 Collector Cut – Off Current ICBO - - 0.1 μA VCB=30V, IE=0 Collector Cut – Off Current ICEO - - 0.1 μA VCE=20V, IB=0 Emitter Cut – Off Current IEBO - - 0.1 μA VEB=5V, IC=0 DC Current Gain Test Conditions hFE 90 - 400 Collector to Emitter Saturation Voltage VCE(sat) - - 0.6 V IC=700mA, IB=70mA Base to Emitter voltage VBE(sat) - - 1.2 V IC=700mA, IB=70mA fT 50 - - MHz Transition Frequency http://www.SeCoSGmbH.com/ 17-Feb-2011 Rev. A VCE=1V, IC=100mA VCE=6V, IC=10mA, f=30MHz Any changes of specification will not be informed individually. Page 1 of 2 2SC2001 Elektronische Bauelemente 0.7 A , 30 V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 17-Feb-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2