A1015 -0.15A , -50V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H 1Emitter 2Collector 3Base J CLASSIFICATION OF hFE A Product-Rank A1015-O A1015-Y A1015-GR Range 70~140 120~240 200~400 D A B C D E F G H J K K E Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 REF. B C F Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PD TJ, TSTG -50 -50 -5 -150 400 125, -55~125 V V V mA mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Cob -50 -50 -5 70 80 - - -0.1 -0.1 -0.1 400 -0.3 -1.1 7 V V V µA µA µA V V MHz pF NF - - 6 dB Noise Figure http://www.SeCoSGmbH.com/ 04-Mar-2011 Rev. B Test Conditions IC= -100µA, IE=0 IC= -0.1mA, IB=0 IE= -100µA, IC=0 VCB= -50V, IE=0 VCE= -50V, IB=0 VEB= -5V, IC=0 VCE= -6V, IC= -2mA IC= -100mA, IB= -10mA IC= -100mA, IB= -10mA VCE= -10V, IC= -1mA, f=30MHz VCB= -10V, IE=0, f=1MHz VCE= -6V, IC= -0.1mA, f=1KHz, RG=10K Any changes of specification will not be informed individually. Page 1 of 2 A1015 Elektronische Bauelemente -0.15A , -50V PNP Plastic-Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 04-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 2